H03H9/14541

Multi-mode surface acoustic wave filter with slanted acoustic reflectors
11545960 · 2023-01-03 · ·

Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and slanted acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with slanted pitches.

Multi-mode surface acoustic wave filter with stepped acoustic reflectors
11502668 · 2022-11-15 · ·

Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and stepped acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with stepped lengths.

ACOUSTIC WAVE DEVICE, HIGH FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS
20220321092 · 2022-10-06 ·

An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 B.sub.2<T×r≤0.10λ.sub.0 are satisfied.

Elastic wave device
11424731 · 2022-08-23 · ·

An elastic wave device includes an interdigital transducer electrode, a dielectric film, and a frequency adjustment film are disposed on a LiNbO.sub.3 substrate. When Euler Angles of the LiNbO.sub.3 substrate are within a range of about 0°±5°, within a range of about θ±1.5°, within a range of about 0°±10°, the interdigital transducer electrode includes a main electrode, a film thickness of the main electrode normalized by a wavelength determined in accordance with an electrode finger pitch of the interdigital transducer electrode is denoted as T, and a density ratio of a material of the main electrode to Pt is denoted as r, the film thickness of the main electrode and θ of the Euler Angles satisfy θ=−0.05°/(T/r−0.04)+31.35°.

MANUFACTURING METHOD FOR SURFACE ACOUSTIC WAVE FILTER PACKAGE STRUCTURE
20220302896 · 2022-09-22 ·

A surface acoustic wave (SAW) filter package structure includes a dielectric substrate having a dielectric layer, a first patterned conductive layer, a second patterned conductive layer, and a conductive connection layer. The conductive connection layer is electrically connected between the first patterned conductive layer and the second patterned conductive layer, which are disposed at opposite sides of the dielectric layer. The second patterned conductive layer has a finger electrode portion. An active surface of a chip is faced toward the finger electrode portion. A polymer sealing frame is disposed between the chip and the dielectric substrate and surrounds the periphery of the chip to form a chamber together with the chip and the dielectric substrate. The mold sealing layer is disposed on the dielectric substrate and covers the chip and the polymer sealing frame. A manufacturing method of the SAW filter package structure is also disclosed.

Acoustic wave device, filter, and multiplexer
11451210 · 2022-09-20 · ·

An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 5° or greater and 18° or less; and a grating electrode that is formed of one or more metal films stacked on the lithium tantalate substrate, a number of the one or more metal films being n (n is a natural number), excites an acoustic wave, and meets a condition: 0.16 λ .Math. i = 1 n ( hi × ρ i ρ 0 ) 0.24 λ
where ρi represents a density of each metal film of the one or more metal films, hi represents a film thickness of the each metal film, ρ0 represents a density of Mo, and λ represents a pitch.

Acoustic wave device

An acoustic wave device including series arm resonators including a first IDT electrode and parallel arm resonators including a second IDT electrode, in the first IDT electrode, a first envelope obliquely extends with respect to the acoustic wave propagation direction, and a second envelope obliquely extends with respect to the acoustic wave propagation direction, the second IDT electrode includes a central region, a first low acoustic velocity region in which an acoustic velocity is lower than an acoustic velocity in the central region, a second low acoustic velocity region in which an acoustic velocity is lower than the acoustic velocity in the central region, a first high acoustic velocity region in which an acoustic velocity is higher than the acoustic velocity in the central region, and a second high acoustic velocity region in which an acoustic velocity is higher than the acoustic velocity in the central region.

Acoustic wave filter with shunt resonator having multiple resonant frequencies

Aspects of this disclosure relate to an acoustic wave resonator having at least two resonant frequencies. An acoustic wave filter can include series acoustic wave resonators and shunt acoustic wave resonators together arranged to filter a radio frequency signal. A first shunt resonator of the shunt acoustic wave resonators can include an interdigital transducer electrode and have at least a first resonant frequency and a second resonant frequency. Related acoustic wave resonators, multiplexers, wireless devices, and methods are disclosed.

Elastic wave device, high-frequency front end circuit, and communication device

An elastic wave device includes first and second IDT electrodes provided over a principal surface of a piezoelectric substrate. The first IDT electrode is provided directly on a principal surface of the piezoelectric substrate and the second IDT electrode is provided over the principal surface with a first dielectric layer interposed therebetween. A second dielectric layer extends to upper portions of the first and second IDT electrodes. A wiring electrode passes over the second dielectric layer and extends to the upper portions of the first and second IDT electrodes. Respective angles between first and second side surfaces of the second dielectric layer and the principal surface of the piezoelectric substrate are smaller than an angle between a side surface of the first dielectric layer and the principal surface of the piezoelectric substrate.

Integrating Predefined Templates with Open Ticket Functionality
20220224309 · 2022-07-14 ·

Techniques and arrangements for integrating predefined templates with open ticket functionality. For instance, a merchant device can identify a type of transaction between a merchant and a customer, select a ticket type for the transaction based on the type of transaction, and select a transaction flow based on the ticket type. The merchant device can then generate an open ticket for the transaction based on the ticket type, and associated transaction flow with the open ticket. Additionally, the merchant device can generate a visual representation of data associated with the open ticket, where a layout of the data within the visual representation is based on the type of transaction and the transaction flow, and present the visual representation to the merchant. In some examples, the type of transaction is identified using received input. In some examples, the type of transaction is identified based on a group associated with the customer.