An elastic wave device includes a piezoelectric substrate, an IDT electrode including a first electrode layer located on the piezoelectric substrate and including one of Mo and W as a main component and a second electrode layer laminated on the first electrode layer and including Cu as a main component, and a dielectric film located on the piezoelectric substrate and covering the IDT electrode. The piezoelectric substrate is made of lithium niobate. The dielectric film is made of silicon oxide. The elastic wave device utilizes Rayleigh waves propagating along the piezoelectric substrate.

An elastic wave device includes a spacer layer on or above a support substrate and outside a piezoelectric film as seen in a plan view from a thickness direction of the support substrate. A cover layer is disposed on the spacer layer. A through electrode extends through the spacer layer and the cover layer and is electrically connected to the wiring electrode. The wiring electrode includes a first section overlapping the through electrode as seen in the plan view from the thickness direction, a second section overlapping the piezoelectric film as seen in the plan view from the thickness direction, and a step portion defining a step in the thickness direction between the first section and the second section. The spacer layer includes an end portion embedded in the cover layer.

Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ can include a quartz substrate and a piezoelectric plate formed from LiTaO.sub.3 or LiNbO.sub.3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2λ. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ρ in a range 1.50 g/cm.sup.3<ρ≤6.00 g/cm.sup.3, 6.00 g/cm.sup.3<ρ≤12.0 g/cm.sup.3, or 12.0 g/cm.sup.3<ρ≤23.0 g/cm.sup.3, and a thickness greater than 0.148λ, greater than 0.079λ, or greater than 0.036λ, respectively.

An elastic wave device includes a piezoelectric substrate made of LiNbO.sub.3, an IDT electrode on the piezoelectric substrate, and a dielectric film on the piezoelectric substrate and covering the IDT electrode. The IDT electrode includes a first electrode layer on or above the piezoelectric substrate and including W or an alloy including W, and a second electrode layer on or above the first electrode layer. A thickness of the first electrode layer is not smaller than 0.062λ, λ being a wavelength determined by a pitch of electrode fingers of the IDT electrode. The piezoelectric substrate has Euler angles of (0°± about 5°, θ, 0°± about 10°), ↓ being not smaller than 8° and not larger than 32°.

An elastic wave resonator includes a piezoelectric body, an IDT electrode positioned on the piezoelectric body, and a pair of reflectors. The IDT electrode includes a plurality of first electrode fingers arranged at a first pitch in a propagation direction of an elastic wave, and at least one second electrode finger formed at each end in the propagation direction of the plurality of first electrode fingers. The reflector is positioned at each end in the propagation direction of the IDT electrode and includes a plurality of strip electrodes arranged, in the propagation direction, at a second pitch wider than the first pitch or having a duty ratio higher than a duty ratio of any of the plurality of first electrode fingers and the at least one second electrode finger.

An acoustic wave device includes a piezoelectric layer including first and second main surfaces facing each other, an IDT electrode on the first main surface and including first and second busbars facing each other and electrode fingers, a first conductor on the second main surface and facing the first busbar with the piezoelectric layer therebetween, and a support on the second main surface and supporting the piezoelectric layer. A cavity that opens towards the piezoelectric layer is provided in the support, and the first conductor is positioned inside the cavity. An electric potential of the first conductor is different from an electric potential to which the first busbar is connected.

An acoustic wave element includes an electrode-finger pitch of reflecting-electrode fingers greater than an electrode-finger pitch pi of comb-shaped electrode fingers, and a center-to-center distance between a reflecting-electrode finger and a comb-shaped electrode finger is equal to or less than about 0.9 times the electrode-finger pitch of the reflecting-electrode fingers. When a reflecting-electrode finger counted from a closest reflecting-electrode finger is designated as a k-th reflecting-electrode finger in order, a reflecting-electrode finger farthest from the IDT electrode is defined as an (n+1)-th reflecting-electrode finger, and an electrode-finger pitch between the k-th reflecting-electrode finger and a (k+1)-th reflecting-electrode finger is defined as a k-th electrode-finger pitch p.sub.k, a value of electrode-finger pitches from a first electrode-finger pitch p.sub.1 to the k-th electrode-finger pitch p.sub.k is less than a value of electrode-finger pitches from a (k+1)-th electrode-finger pitch p.sub.k+1 to an n-th electrode-finger pitch p.sub.n.

An elastic wave device includes a piezoelectric film laminated on a first main surface of a support substrate including a recessed portion open to a first main surface. A cavity portion including the recessed portion is defined by the support substrate and the piezoelectric film. An electrode is on the piezoelectric film. The electrode includes first and second bus bars, a first electrode finger connected to the first bus bar, and a second electrode finger connected to the second bus bar. The first and second bus bars include corner portions inside the cavity portion when viewed in plan view. A curved portion as a pressure relaxation portion to relax pressure on the piezoelectric film at at least one of the corner portions of the first and second bus bars is provided between the corner portion and an outer edge of the cavity portion.

An apparatus is disclosed for suspending an electrode structure using a dielectric. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure. The electrode structure has a first surface facing the piezoelectric layer and separated from the piezoelectric layer by a distance. The surface-acoustic-wave filter also includes a dielectric disposed on at least one other surface of the electrode structure and configured to extend past a plane defined by the first surface of the electrode structure and toward the piezoelectric layer to define a cavity between at least a portion of the first surface of the electrode structure and the piezoelectric layer.

An acoustic wave device includes a support substrate, a dielectric film, a piezoelectric layer, and an excitation electrode. The piezoelectric layer includes first and second main surfaces. The second main surface is on a side including the dielectric film. A cavity portion is provided in the dielectric film and overlaps at least a portion of the excitation electrode in plan view. The dielectric film includes a side wall surface facing the cavity portion and including an inclined portion inclined so that a width of the cavity portion decreases with increasing distance away from the piezoelectric layer. The inclined portion includes at least an end portion on a side including the piezoelectric layer, in the side wall surface. When an angle between the inclined portion and the second main surface of the piezoelectric layer is defined as an inclination angle α, the inclination angle α is from about 40° to about 80° inclusive.