An elastic wave device includes a piezoelectric substrate, a first elastic wave element on the piezoelectric substrate and including at least one first interdigital transducer electrode and a first reflector in an area of the first interdigital transducer electrode at one side in a propagation direction of elastic waves, and a second elastic wave element on the piezoelectric substrate and including at least one second interdigital transducer electrode and a second reflector in an area of the second interdigital transducer electrode at one side in the propagation direction of elastic waves. The first and second reflectors are disposed side by side in the propagation direction. A reflection member, between the first and second reflectors, reflects elastic waves in at least a direction different from the propagation direction.

In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by , the distance between the first IDT and the second IDT of the elastic wave filter is about 12 or less.

An acoustic resonator filter comprises a plurality of resonator structures. One or more of the plurality of resonator structures comprises a substrate having a first surface and a second surface. The resonator structure also comprises a piezoelectric layer disposed over the substrate. The SAW resonator structure also comprises a layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. The layer has a first surface and a second surface. The layer and the piezoelectric layer have a combined thickness (H) selected so an anti-resonance (AR) condition exists for an undesired bulk vertical shear mode between the first surface of the piezoelectric layer and the second surface of the layer.

A surface acoustic wave resonator device comprises a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer (IDT); a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element. The IDT is configured to be connectable to a ground. The conducting layer is configured to be connectable to the ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer. This defines a gateable channel, which extends from the fingers to the ground via the conducting layer and the main ohmic contact. The gate element is electrically insulated from the conducting layer. The gate element is configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to the ground, in operation of the device.

In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by , the distance between the first IDT and the second IDT of the elastic wave filter is about 12 or less.

Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure that includes a first busbar and a second busbar along with electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. The electrode structure further includes a first conductive structure disposed between each of the first plurality of fingers and disposed between the first busbar and the second plurality of fingers. The electrode structure further includes a second conductive structure disposed between each of the second plurality of fingers and disposed between the second busbar and the first plurality of fingers. The first conductive structure and the second conductive structure each have a height that is less than a height of the second plurality of fingers.

In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by , the distance between the first IDT and the second IDT of the elastic wave filter is about 12 or less.

The present application relates to a biosensor that employs an acoustic cavity to store mechanical energy. In particular examples, the biosensor includes an electrode region and one or more reflector regions to form the acoustic cavity, as well as a functionalized active area disposed in proximity to the cavity. Methods of making and using such biosensors are also described herein.

Described herein are techniques for enhancing isolation in on-chip piezoelectric-based isolators. Several techniques are described that improve isolation in piezoelectric isolators. According to an aspect of the present disclosure, a piezoelectric isolator may include structures arranged to decrease the occurrence of pockets of high electric field and/or to increase the breakdown electric field in the path from the transmitter to the receiver. Further aspects of the present disclosure relate to techniques for increasing the efficiency of piezoelectric isolators while also limiting the formation of spurious signals. The inventors have developed techniques for promoting propagation of surface acoustic waves toward the receiver while limiting propagation in the opposite direction.

The present disclosure relates to a surface acoustic wave (SAW) resonator that includes at least a piezoelectric structure and an interdigital transducer (IDT) that is over the piezoelectric structure and features at least one edge region. The IDT includes multiple first electrode fingers and multiple second electrode fingers extending in a transverse direction. The first electrode fingers and the second electrode fingers are interleaved with one another along a longitudinal direction orthogonal to the transverse direction. The at least one edge region extends in the longitudinal direction and spans across certain ones of the first electrode fingers and certain ones of the second electrode fingers. Herein, an acoustic wave propagates in the at least one edge region at a different velocity than other regions confined in the IDT. The at least one edge region is realized in the IDT at least by a thickness variation of the piezoelectric structure.