A resonance device that includes a MEMS substrate including a resonator, an upper cover, and a bonding portion that bonds the MEMS substrate to the upper cover to seal a vibration space of the resonator. The bonding portion includes a eutectic layer composed of a eutectic alloy of germanium and a metal mainly containing aluminum, a first titanium (Ti) layer, a first aluminum oxide film, and a first conductive layer consecutively arranged from the MEMS substrate to the upper cover.

A resonator includes a surface silicon layer as a base material, a first silicon oxide layer disposed on a first surface of the surface silicon layer, and a second silicon oxide layer disposed on the opposite side to the surface silicon layer of the first silicon oxide layer, wherein when the thickness of the surface silicon layer is represented by tsi, the thickness of the first silicon oxide layer is represented by ta, and the thickness of the second silicon oxide layer is represented by tb, the following relationships are satisfied: 0.138tsi<ta<0.268tsi and 0.189tsi<tb<0.527tsi.

A resonator is provided having a first electrode and a second electrode; and a piezoelectric film that is disposed between the first and second electrodes, has an upper surface opposing the first electrode, and that vibrates in a predetermined vibration mode when a voltage is applied between the first and second electrodes. Moreover, the resonator includes a protective film made of an insulator and disposed opposing the upper surface of the piezoelectric film with the first electrode interposed therebetween. Furthermore, a conductive film made of a conductor is provided that is disposed opposing the upper surface of the piezoelectric film with the protective film interposed therebetween, where the conductive film is electrically connected to any one of the first and second electrodes.

A resonator that includes a substrate, an insulating film that is formed on the substrate, and vibration regions each of which is formed on the insulating film and includes lower electrodes that are formed on the insulating film, a piezoelectric film that is formed on the lower electrodes, and an upper electrode that is formed on the piezoelectric film. At least one lower electrode of the lower electrodes that are formed on the insulating film has an electric potential that differs from an electric potential of another lower electrode such that at least one vibration region vibrates in antiphase with another vibration region. Moreover, a package seals a resonator and includes the substrate, the insulating film, and the vibration regions and includes a ground terminal for grounding the substrate.

A resonator including a lower electrode, an upper electrode, and a piezoelectric film that is formed between the lower electrode and the upper electrode. A MEMS device is provided that includes an upper lid that faces the upper electrode, and a lower lid that faces the lower electrode and that seals the resonator together with the upper lid. A CMOS device is mounted on a surface of the upper lid or the lower lid opposite a surface that faces the resonator. The CMOS device includes a CMOS layer and a protective layer that is disposed on a surface of the CMOS layer opposite a surface that faces the resonator. The upper or lower lid to which the CMOS device is joined includes a through-electrode that electrically connects the CMOS device to the resonator.

A method for manufacturing a resonator that effectively addresses variations in resistivity for each wafer. The method for manufacturing a resonator includes forming a Si oxide film on a surface of a degenerated Si wafer, where the Si oxide film has a thickness set that is based on the doping amount of impurity in the degenerated Si wafer.

A resonator including a base; two or more vibration arms connected at ends thereof to a front end of the base and spaced apart from each other across a predetermined space and extending away from the base. Moreover, a connection member connects the vibration arms that bend in the same direction when an electric field is applied. The resonator inhibit occurrence of a spurious mode that otherwise occurs in a resonator that performs out-of-plane bending.

A resonator includes a vibration portion with a vibration arm extending from a base and having an open end that performs bending vibration. The vibration portion includes upper and lower electrodes with a piezoelectric film disposed therebetween that causes bending vibration of the vibration arm when a voltage is applied between the upper and lower electrodes. A protective film faces the piezoelectric film with the upper electrode interposed therebetween and a conductive film faces the piezoelectric film with the protective film interposed therebetween. Moreover, the conductive film is exposed in a region at the open end and a via electrode is formed in the protective film to electrically connect the conductive film to one of the upper and lower electrodes. The via electrode is positioned closer to a first region than the open end in the second region of the vibration arm in a plan view of the piezoelectric film.

A resonator includes a vibration portion with upper and lower electrodes with a piezoelectric film disposed therebetween. Moreover, a protective film is provided to face the piezoelectric film with the upper electrode interposed therebetween and is exposed in a first region in the vibration portion. A conductive film is provided to face the piezoelectric film with the protective film interposed therebetween and is exposed in a second region that is adjacent to the first region in the vibration portion. A connection electrode is formed in the protective film to electrically connect the conductive film to the lower electrode. The upper electrode is formed such that an area of a region overlapping the conductive film is equal to or smaller than half of a total area of the conductive film and/or avoids the region overlapping the conductive film.

A resonator is provided that includes a vibration portion having a first and second electrodes, a piezoelectric film disposed therebetween and having a first face opposing the first electrode, and at least two temperature characteristic adjustment films formed to oppose the first face of the piezoelectric film with the first electrode interposed therebetween. Moreover, the resonator includes a frame that surrounds at least part of the vibration portion; and a holding arm connecting the vibration portion to the holding portion. The vibration portion includes a surface opposing the first face of the piezoelectric film and having first and second regions in which an average amount of displacement is larger than an average amount of displacement in the first region when the vibration portion vibrates.