A hybrid resonator includes an acoustic wave resonator (AWR) having a piezoelectric material; a first electrical contact, electrically conductively connected to the piezoelectric material; and a second electrical contact, electrically conductively connected to the piezoelectric material. The hybrid resonator further includes a first resonant circuit, electrically conductively connected in series or parallel to the acoustic wave resonator via at least one of the first electrical contact and the second electrical contact. The resonant circuit includes a first inductor, and a first capacitor; wherein, if the first resonant circuit is electrically conductively connected to the acoustic wave resonator in series, the first inductor and the first capacitor are electrically conductively connected to one another in parallel, and if the first resonant circuit is electrically conductively connected to the acoustic wave resonator in parallel, the first inductor and the first capacitor are electrically conductively connected to one another in series.

A front-end module may include an acoustic wave filter with a first and second interdigital transducer electrode, and a low noise amplifier (LNA) that converts a differential input to a single-ended output with respect to ground. The first interdigital transducer electrode may be single-ended with a first input bus bar configured to receive an input signal and a second input bus bar connected to ground. The second interdigital transducer electrode may be differential with a first output bus bar connected to a first output terminal and a second output bus bar connected to a second output terminal. The LNA may have a differential input connected to the acoustic wave filter, a first input transistor that receives a first signal from the first output terminal of the acoustic wave filter, and a second input transistor that receives a second signal from the second output terminal of the acoustic wave filter.

A surface acoustic wave device can have a piezoelectric layer and at least one interdigital transducer electrode thereon with a trapezoidal shape. This can be useful to fill dead space or voids between nonparallel elements on the layer. For example, an array with ranks of slanted interdigital transducer electrodes may not be aligned with non-slanted elements (e.g., a surface acoustic wave filter). This can leave voids or openings with unused portions of the piezoelectric layer. Trapezoidal elements such as those described here can solve this problem and help suppress transverse modes.

An acoustic wave filter package is disclosed. The acoustic wave filter package can include a first acoustic wave filter, a second acoustic wave filter, and a shared node. The first acoustic wave filter is configured to filter a first radio frequency signal. The first acoustic wave filter has a first shunt resonator. The second acoustic wave filter is configured to filter a second radio frequency signal. The second acoustic wave filter having a second shunt resonator. The first and second shunt resonators are electrically coupled to ground at the shared node.

A Lamb wave filter is provided which has improved out of band rejection, the filter including a substrate having a center region and two edge regions, a first set of electrodes arranged as a first interdigital transducer displaced on one of the two edge regions and configured to receive an input signal, a second set of electrodes arranged as a second interdigital transducer displaced on the other of the two edge regions and configured to provide a filtered output signal, and a third set of electrodes disposed parallel to the first and second sets of electrodes on the center region of the substrate.

An acoustic wave filter device includes a second filter section connected to a first filter section. The second filter section includes acoustic wave resonators in a ladder circuit configuration. Of the acoustic wave resonators in the first and second filter sections, the acoustic wave resonator having the smallest fractional bandwidth is included in the second filter section. In the second filter section, inductors are respectively connected between parallel arm resonators and a reference potential. Attenuation near a pass band in the second filter section is larger than attenuation near a pass band in the first filter section.

An acoustic wave device includes an IDT electrode with an inclined IDT structure on a piezoelectric substrate. An intersection region, where a first electrode finger and a second electrode finger overlap each other when viewed in an acoustic wave propagation direction, includes a central region and first and second low acoustic velocity regions on both sides of the central region. The first and second low acoustic velocity regions have an asymmetric shape about a central axis extending in a length direction of the first and second electrode fingers.

Aspects of this disclosure relate to a multiplexer with a hybrid acoustic passive filter. The multiplexer includes a plurality of filters configured to filter respective radio frequency signals, a shared filter coupled between each of the plurality of filters and a common node, and a radio frequency filter coupled to the common node. At least a first filter of the plurality of filters includes acoustic resonators and a non-acoustic passive component. Related multiplexers, wireless communication devices, and methods are disclosed.

An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, and a material having a density greater than a density of the first dielectric film disposed above the gap regions of the IDT electrodes.

Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) resonator comprising a first apodized interdigital transducer (IDT) disposed between a first busbar and a second busbar, and a second SAW resonator comprising a second apodized IDT disposed between the second busbar and a third busbar, wherein the second busbar is at an angle with respect to at least one of the first busbar or the third busbar.