H03K3/356026

CONTROL OF SKEW BETWEEN MULTIPLE DATA LANES

Provided are a method and apparatus for controlling a skew between multiple data lanes. In the method and apparatus, a first data lane control stage controls control outputting first data over a first data lane based on a first data lane clock and a second data lane control stage controls outputting second data over a second data lane based on a second data lane clock. In the method and apparatus, a first device is associated with a system clock and is configured to generate the first and second data for outputting over the first and second data lanes. A clock control stage causes the first and second data lane clocks to be offset from each other by a fixed time duration that is an integer fraction of a cycle duration of the system clock.

Detecting device and semiconductor device

The power of a semiconductor device is reduced. The semiconductor device includes a latch circuit composed of a dynamic circuit. The latch circuit includes a first circuit having a decoding function, a plurality of capacitors, a plurality of clock input terminals, a signal input terminal, a first output terminal, and a second output terminal. In a period during which H is supplied to a first clock signal, the potential of the first capacitor is updated on the basis of the results of decoding performed by the first circuit. In a period during which H is supplied to a second clock signal, the potential of the second capacitor is updated on the basis of the potential of the first capacitor, and the potential of the second capacitor is supplied as a first output signal to the first output terminal. In a period during which H is supplied to a third clock signal, the potential of the third capacitor is updated on the basis of the potential of the second capacitor, and the potential of the third capacitor is supplied as a second output signal to the second output terminal.

CIRCUIT STRUCTURE AND RELATED METHOD FOR RADIATION RESISTANT MEMORY CELL
20240046983 · 2024-02-08 ·

Embodiments of the disclosure provide a circuit structure and related method to provide a radiation resistant memory cell. A circuit structure may include a first latch having an input node and an output node. A second latch has an input node and an output node, in which the output node of the second latch is coupled to the input node of the first latch, and the input node of the second latch is coupled to the output node of the first latch. A read/write (R/W) circuit includes a plurality of transistors coupling a word line, a bit line, and an inverted bit line to at least two outputs. One of the at least two outputs is coupled to the input node of the first latch and another of the outputs is coupled to the input node of the second latch.

GATE DRIVER FOR A FINGERPRINT SENSOR
20190318147 · 2019-10-17 ·

An example gate driver for an array of sensing pixels is disclosed. The gate driver includes a first flip-flop including a first data input and a first data output. The first data output is coupled to a first group of sensing pixels of the array. The gate driver also includes a second flip-flop including a second data input and a second data output. The second data output is coupled to a second group of sensing pixels of the array. The gate driver further includes a first insertion circuit configured to receive a first start signal and to cause, based on the first start signal, the second flip-flop to drive the second group of sensing pixels without the first flip-flop driving the first group of sensing pixels for a scan of the array.

SEMICONDUCTOR DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE
20190164517 · 2019-05-30 ·

A first flipflop outputs a first signal synchronized with a first clock signal, a second flipflop outputs a second signal synchronized with a second clock signal, and a third flipflop outputs a third signal synchronized with a third clock signal. The second flipflop includes first to third transistors. In the first transistor, the second clock signal is input to a first terminal and the second signal is output from a second terminal. In the second transistor, a first signal is input to a first terminal, a second terminal is electrically connected to a gate of the first transistor, and the first clock signal is input to a gate. In the third transistor, the third signal is input to a first terminal, a second terminal is electrically connected to the gate of the first transistor, and the third clock signal is input to a gate.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME
20190097581 · 2019-03-28 · ·

A semiconductor device may include an amplification circuit. The amplification circuit may be configured to generate an output signal and an output bar signal based on a mode signal, first and second control signals, an input signal, and an input bar signal. The amplification circuit may determine voltage levels of the output signal and the output bar signal based on the mode signal and the first and second control signals regardless of the input signal and the input bar signal.

Semiconductor device, display module, and electronic device

A first flipflop outputs a first signal synchronized with a first clock signal, a second flipflop outputs a second signal synchronized with a second clock signal, and a third flipflop outputs a third signal synchronized with a third clock signal. The second flipflop includes first to third transistors. In the first transistor, the second clock signal is input to a first terminal and the second signal is output from a second terminal. In the second transistor, a first signal is input to a first terminal, a second terminal is electrically connected to a gate of the first transistor, and the first clock signal is input to a gate. In the third transistor, the third signal is input to a first terminal, a second terminal is electrically connected to the gate of the first transistor, and the third clock signal is input to a gate.

D flip-flop and signal driving method

The present disclosure provides D flip-flops and signal driving methods using D flip-flops thereof. An exemplary D flip-flop includes a pulse signal generating circuit configured to input a first clock signal, a first data signal, a second data signal and a third data signal and generate a clock pulse signal. The clock pulse signal responds a rising-edge and a falling-edge of the first clock signal. The pulse clock signal is a pulse signal when the first data signal is opposite to the second data signal. The D flip-flop also includes a latching circuit configured to sample and transfer the first data signal and a data signal opposite to the first data signal to be used as the second signal and a fourth data signal respectively when the clock signal is at the high level.

Level shifter and operation method thereof
10192595 · 2019-01-29 · ·

A level shifter includes an input control unit suitable for outputting an output control signal according to a pulse width of a data signal and a pulse width of an input control signal; and an output control unit suitable for controlling an output driving signal according to the output control signal.

Flip flop standard cell

A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.