A level shifter includes an input circuit having first and second input terminals configured to receive complementary input signals at a first voltage level and a second voltage level. A cross-latch circuit is coupled to the input circuit, and has first and second output terminals configured to provide complementary output signals at a third voltage level and a fourth voltage level. The input circuit includes first and second control nodes configured to output first and second control signals at the first voltage level and the fourth voltage level based on the input signals. A tracking circuit is coupled to the input circuit and the cross-latch circuit, and is configured to input first and second tracking signals to the cross-latch circuit based on the first and second control signals, wherein the first tracking signal is the greater of the first control signal and the third voltage level, and the second tracking signal is the greater of the second control signal and the third voltage level.

A semiconductor circuit may include a first flip-flop configured to output a first input data as a first output signal in response to an inverted input clock signal, a second flip-flop configured to output a second input data as a second output signal in response to an input clock signal, a glitch-free circuit configured to receive the inverted input clock signal, the input clock signal, the first output signal, and the second output signal, and to determine a voltage level of a node on the basis of the inverted input clock signal, the input clock signal, the first output signal, and the second output signal, and an inverter configured to output an output clock signal obtained by inverting the voltage level of the node determined by the glitch-free circuit. The glitch-free circuit does not include a transistor having a gate connected to the node.

To provide a miniaturized data holding circuit. First and second MOS transistors respectively transmit a data signal and an inverted data signal to inputs of first and second inverting gates that constitute a state holding circuit when a clock signal is at a first level. Fifth and sixth MOS transistors are respectively inserted in a feedback path from an output of the second inverting gate to the input of the first inverting gate and a feedback path from an output of the first inverting gate to the input of the second inverting gate, and respectively transmit the outputs of the second and first inverting gates when the clock signal is at a second signal level. Seventh and eighth MOS transistors are constituted in a channel of a conductive type different from the first MOS transistor and connected in parallel to the fifth and sixth MOS transistors, respectively, and transmit the output of the second inverting gate and the output of the first inverting gate on the basis of the inverted data signal and the data signal, respectively.

A level shifter circuit is provided. In some examples, the level shifter circuit includes a first set of transistors and a second set of transistors coupled between first and second power supply nodes. The control terminals of the first and second lower transistors are coupled to an input node. The level shifter circuit also includes a third set of transistors and a fourth set of transistors coupled between first and third power supply nodes. A control terminal of a third lower transistor is coupled to a second intermediate node, and a control terminal of a fourth lower transistor is coupled to a first intermediate node. Control terminals of the first upper transistor and the fourth upper transistor are coupled to a third intermediate node. Control terminals of the second upper transistor and the third upper transistor are coupled to a fourth intermediate node.

A level shifter includes an input circuit having first and second input terminals configured to receive complementary input signals at a first voltage level and a second voltage level. A cross-latch circuit is coupled to the input circuit, and has first and second output terminals configured to provide complementary output signals at a third voltage level and a fourth voltage level. The input circuit includes first and second control nodes configured to output first and second control signals at the first voltage level and the fourth voltage level based on the input signals. A tracking circuit is coupled to the input circuit and the cross-latch circuit, and is configured to input first and second tracking signals to the cross-latch circuit based on the first and second control signals, wherein the first tracking signal is the greater of the first control signal and the third voltage level, and the second tracking signal is the greater of the second control signal and the third voltage level.

A semiconductor circuit may include a first flip-flop configured to output a first input data as a first output signal in response to an inverted input clock signal, a second flip-flop configured to output a second input data as a second output signal in response to an input clock signal, a glitch-free circuit configured to receive the inverted input clock signal, the input clock signal, the first output signal, and the second output signal, and to determine a voltage level of a node on the basis of the inverted input clock signal, the input clock signal, the first output signal, and the second output signal, and an inverter configured to output an output clock signal obtained by inverting the voltage level of the node determined by the glitch-free circuit. The glitch-free circuit does not include a transistor having a gate connected to the node.

A level shifter circuit is provided. In some examples, the level shifter circuit includes a first set of transistors and a second set of transistors coupled between first and second power supply nodes. The control terminals of the first and second lower transistors are coupled to an input node. The level shifter circuit also includes a third set of transistors and a fourth set of transistors coupled between first and third power supply nodes. A control terminal of a third lower transistor is coupled to a second intermediate node, and a control terminal of a fourth lower transistor is coupled to a first intermediate node. Control terminals of the first upper transistor and the fourth upper transistor are coupled to a third intermediate node. Control terminals of the second upper transistor and the third upper transistor are coupled to a fourth intermediate node.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

The present application is directed to a level shifting circuit. In one form, a level shifting circuit includes a first inverter, a level shifting unit, and a fast driving unit. The first inverter is configured to invert an input signal received at an input node and to output an inverted input signal to a second input node. The level shifting unit is configured to perform amplitude up-shifting processing on a received input signal. The fast driving unit is configured to pull up an output signal of an output node of the level shifting unit by increasing a discharge current of the level shifting unit when receiving the input signal.