A driver circuit for an electronic switch is described herein. According to one embodiment the driver circuit includes an input buffer with an input node for receiving a buffer input signal, a pull-down circuit coupled to the input node and a ground node, and a pull-up circuit coupled to the input node and a supply node. The driver circuit further includes control circuitry configured to activate either the pull-down circuit or the pull-up circuit. The pull-up circuit is activated when the voltage level of the buffer input signal is above a first threshold, and the pull-down circuit is activated when the voltage level of the buffer input signal is below a second threshold.

A receiver circuit receives a signal from a semiconductor device. The receiver circuit includes an input buffer including a first plurality of transistors, the input buffer being configured to detect a fabrication condition of the receiver circuit, generate a control signal according to the detected fabrication condition, and control a gain of an input signal by adjusting a number of operating transistors among the first plurality of transistors in response to the control signal; and a latch circuit configured to latch an output signal of the input buffer, and adjust threshold voltages of a second plurality of transistors in response to a test signal.

A circuit includes an input circuit, a level shifter circuit, an output circuit and a feedback circuit. The input circuit is coupled to a first voltage supply, and configured to receive a first input signal, and to generate a second input signal. The level shifter circuit is coupled to the input circuit, and configured to receive an enable signal, the first input signal or the second input signal, and to generate a first signal responsive to the enable signal or the first input signal. The output circuit is coupled to the level shifter circuit, and is configured to receive the first signal, and to generate an output signal or a set of feedback signals responsive to the first signal. The feedback circuit is coupled to the level shifter circuit and output circuit, and is configured to receive the enable signal or the set of feedback signals.

Apparatuses for receiving an input data signal are described. An example apparatus includes: a plurality of data input circuits and an internal data strobe generator. Each data input circuit of the plurality of data input circuits includes: an amplifier that receives data from a data terminal, and latches the data in an enable state and refrains from latching data in a disable state; and a voltage control circuit coupled to a tail node of the amplifier and provides a first voltage to the tail node during the enable state, and further provides a second voltage different from the first voltage to the tail node in a first mode and to sets the tail node in a floating state in a second mode during the disable state. The internal data strobe signal generator provides a plurality of internal data strobe signals to the plurality of corresponding data input circuits respectively.

Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has first transistors arranged as a diode, a first latch and feedback assist to facilitate shifting an input voltage in a first voltage domain to an output voltage in a second voltage domain. The first stage uses the diode and the first latch to reduce contention between the first latch and input transistors. The diode, the first latch and the feedback assist enable activation of the input transistors with the input voltage. The second stage has second transistors arranged as a second latch followed by output buffers that provide a buffered output voltage as feedback to the feedback assist of the first stage.

A method of powering up a circuit includes powering up a latch circuit in a known latch state by applying a first power supply voltage differential of a first voltage domain across power supply terminals of the latch circuit. A current diode inhibits current diode in a current path between a latch node of the latch circuit and a power supply terminal when the power supply voltage differential is below a threshold voltage during the powering up in which the inhibiting prevents the latch circuit from switching from the known latch state during the powering up.

A method for high-speed voltage level translation includes biasing a high-voltage (HV) gate of an HV transistor to an intermediate voltage with a bias device. A low-voltage (LV) transistor is activated with a positive voltage transition applied to an LV gate of the LV transistor, wherein the HV transistor is connected in series between an output and an LV drain of the LV transistor. The intermediate voltage is bootstrapped to a bootstrapped voltage in response to the positive voltage transition on the LV gate coupled to the HV gate through a capacitor therebetween. The output is discharged. A time constant, defined by a resistance of the bias device and a capacitance of the capacitor, is greater than a minimum time constant, thereby maintaining the bootstrapped voltage on the HV gate at or above a drive voltage for a minimum period to discharge the output to a minimum voltage.

Level-shifting circuits including a plurality of p-type metal oxide semiconductor (PMOS) devices and n-type metal oxide semiconductor (NMOS) devices may be used to level-shift an input voltage signal between a low voltage domain having a low voltage level and a high voltage domain having a high voltage level, to obtain an output voltage signal having an output voltage level at an output node. A current-controlled tie circuit may be connected between the output node and the output voltage level, to conduct a current that causes the output node of the level-shifting circuit to be in a pre-defined logic state during a power-up sequence of the level-shifting circuit. Accordingly, spurious, non-deterministic output levels are avoided during the power-up sequence.

A method, non-transitory computer readable medium, and circuit for wide range voltage translation using monostable multi-vibrator feedback are disclosed. The circuit includes a bias generation segment and a voltage translator to shift a voltage level of a signal from a first voltage domain of a digital system to a second voltage domain of the digital system. The bias generation segment is configured to detect a voltage range of the second voltage domain and to configure the voltage translator responsive to the voltage range. The voltage translator is configured to directly shift the voltage level of the signal to the second voltage domain. The second voltage domain has voltage levels that are higher than a maximum voltage that can be tolerated by transistors in the digital system.

A semiconductor device includes: first and second input circuits in a central region and correspondingly configured to operate in a first voltage domain; first and second single bit level shifters (SBLSs) correspondingly in first and second regions at first and second sides of the central region relative to a first direction and electrically coupled correspondingly to the first and second input circuits, and correspondingly configured to operate in a second voltage domain; and a control circuit configured to toggle each of the first and second SBLSs between a normal state and a standby state when a control signal is received from the control circuit.