A memory device includes a level down shifting driver circuit. The level down shifting driver circuit include input circuitry having at least one input port, and a cross-junction circuitry electrically coupled to the input circuitry and configured to receive a first signal from the input circuitry to drive one or more devices included in the cross-junction circuitry. The level down shifting driver circuit further includes an output drive circuitry electrically coupled to the cross-junction circuitry and configured to receive a second signal from the cross-junction circuitry, wherein the output drive circuitry comprises an output line configured to deliver a first voltage output based on a first input voltage received by the input circuitry, and a second voltage output based on a second input voltage received by the input circuitry.

The present document relates to a level shifter circuit configured to transform an input voltage at an input of the level shifter circuit into an output voltage at an output of the level shifter circuit. The level shifter circuit may comprise a first switching element coupled between an output supply voltage and a positive output terminal, wherein a control terminal of the first switching element is coupled to a negative output terminal. The level shifter circuit may comprise a second switching element coupled between the output supply voltage and the negative output terminal, wherein a control terminal of the second switching element is coupled to the positive output terminal. The level shifter circuit may comprise a drive circuit configured to drive the control terminals of the first and the second switching element based on the input voltage at the input of the level shifter circuit.

A level converting enable latch includes a level shifter circuit and a latch circuit. The level shifter circuit receives a first data input signal, and generates a first data output signal, wherein the first data input signal and the first data output signal have different voltage swings. The latch circuit sets a second data output signal in response to the first data output signal when a latch enable signal is set by a first logic value, and latches the second data output signal when the latch enable signal is set by a second logic value. The latch circuit includes a first control circuit. The first control circuit enables a latch feedback loop of the latch circuit when the latch enable signal is set by the second logic value, and disables the latch feedback loop of the latch circuit when the latch enable signal is set by the first logic value.

A level shifter includes a pull-down circuit, a pull-up circuit, a protection circuit, and an output generator. The pull-down circuit is configured to receive input voltages, and generate bias voltages. The input voltages are associated with a voltage domain. The pull-up circuit is configured to receive a supply voltage and generate control voltages. The protection circuit is configured to receive reference voltages, and control the generation of the bias voltages and the control voltages. The output generator is configured to receive at least one of the reference voltages, and at least one of the bias voltages and the control voltages, and generate output voltages that are able to reach minimum and maximum voltage levels of another voltage domain. Further, the output voltages remain unaffected by variations in process, voltage, and temperature.

The present invention discloses a voltage level conversion circuit. A first and a second N-type driving transistors turn on when a first power voltage source supplies a high state voltage. A voltage transmission circuit transmits a first and a second input voltages having opposite levels to sources of the first and the second N-type driving transistors. A current source operates according to a second supply voltage source and has a first and a second output terminals. A first and a second connection transistors respectively couple between the drain of the first N-type driving transistor and the second output terminal and between the drain of the second N-type driving transistor and the first output terminal. The first and the second connection transistors turn on and off when the first voltage supply source supplies the high state voltage and a low state voltage.

The present application is directed to a level shifting circuit. In one form, a level shifting circuit includes a first inverter, a level shifting unit, and a fast driving unit. The first inverter is configured to invert an input signal received at an input node and to output an inverted input signal to a second input node. The level shifting unit is configured to perform amplitude up-shifting processing on a received input signal. The fast driving unit is configured to pull up an output signal of an output node of the level shifting unit by increasing a discharge current of the level shifting unit when receiving the input signal.

An apparatus includes a NMOS transistor having a drain, a first PMOS transistor having a drain connected to the drain of the NMOS transistor, a level shifter having an input and an output, the input of the level shifter being connected to the drain of the NMOS transistor and the drain of the first PMOS transistor, a first digital logic circuit having a drain and a gate, a first inverter having an input connected to the Aoutput of the level shifter and the drain of the first digital logic circuit, and a second digital logic circuit having an output connected to the gate of the first digital logic circuit, at least one condition being set in the apparatus during a read operation.

An apparatus includes a NMOS transistor having a drain, a first PMOS transistor having a drain connected to the drain of the NMOS transistor, a level shifter having an input and an output, the input of the level shifter being connected to the drain of the NMOS transistor and the drain of the first PMOS transistor, a first digital logic circuit having a drain and a gate, a first inverter having an input connected to the A output of the level shifter and the drain of the first digital logic circuit, and a second digital logic circuit having an output connected to the gate of the first digital logic circuit, at least one condition being set in the apparatus during a read operation.

An output potential level among two first levels is delivered according to an input level among two second levels. The output potential level is delivered at a first node connecting together first and second transistors electrically in series between two second nodes of application of the first levels. A first DC voltage defining a high limit for the control voltage of the first transistor is delivered by a first voltage generator powered by one of the second nodes. A second DC voltage defining a high limit for the control voltage of the second transistor is delivered by a second voltage generator controlled by a value representative of the first voltage and powered between the second nodes.

A level shifter includes a self-initialization circuit. The self-initialization circuit judges whether the input signal and the inverted input signal received by the level shifter are invalid while a power supply voltage is powered up. If the self-initialization circuit confirms that the input signal and the inverted input signal received by the level shifter are invalid, the self-initialization circuit controls the level shifter to be maintained in a self-initializing power up state. Consequently, the output signal from the level shifter has the specified voltage level.