A switch circuit is provided. The switch circuit includes a P-type transistor switch and a first P-type control transistor. The P-type transistor switch includes a first control end, a first output end, and a first input end. The first input end receives a first input signal whose logic level is one. The first P-type control transistor is coupled to the first input end and the first control end. The first P-type control transistor includes a second control end. The second control end receives a second input signal whose logic level is zero to turn on the first P-type control transistor. When the first P-type control transistor is turned on, the first input signal is transmitted to the first control end of the P-type transistor switch to turn off the P-type transistor switch.

A method of generating a gate drive signal for driving a control terminal of a power switch includes detecting a system input signal; determining a signal pulse of the system input signal being a first signal pulse following a power up event, or following an idle period, or following removal of a fault condition; and in response, generating a soft gate drive signal to drive the control terminal of the power switch to softly turn on the power switch. In another embodiment, the method includes determining a duration of the on period of the system input signal exceeding a maximum on duration and in response, disabling the gate drive signal to turn off the power switch; and determining a deassertion transition of the system input signal and in response, blocking the system input signal from the gate drive signal for a minimum off duration.

An off chip driving system includes a decision circuit, multiple first and second adjustable-enhancement circuits, and multiple first and second drivers. The decision circuit outputs a first and a second decision signal according to a clock and an input data. Each first adjustable-enhancement circuit generates one of first control signals in response to the first and the second decision signal and one of first optional signals. Each second adjustable-enhancement circuit generates one of second control signals in response to the first and the second decision signal and one of second optional signals. Each first driver is coupled to the corresponding first adjustable-enhancement circuit and configured to be enabled in response to the corresponding first control signal. Each second driver is coupled to the corresponding second adjustable-enhancement circuit and configured to be enabled in response to the corresponding second control signal.

A driver circuit for switching edge modulation of a power switch. The driver circuit includes a first driver circuit input including a downstream input node, and a power switch including an upstream first gate node. A charging path including a charging resistor is situated between the input node and the first gate node. A discharging path including a discharging resistor is situated between the input node and the first gate node. A gate path is situated between the input node and the first gate node. A power switch transistor, whose gate is connected to the first gate node, is provided. A gate path includes a gate resistor. The driver circuit is configured so that, during a switching process of the power switch, the gate path is temporarily short-circuited either via the charging path or the discharging path, to increase the slope of the switching behavior of the power switch.

Apparatus and associated methods relate to providing a power stage having an auxiliary power switch coupled to a high-side switch or a low-side switch in parallel and turning on the auxiliary power switch earlier than turning on the high-side switch. In an illustrative example, the auxiliary power switch may be connected with the high-side switch in parallel. The on-resistance of the auxiliary power switch may be greater than the on-resistance of the high-side switch. A gate drive engine may be configured to generate gate driving signals for the switches in the power stage such that the auxiliary power switch is turned on a predetermined time duration earlier than the high-side switch. Thus, the ringing at a switch node of the power stage may be advantageously reduced or eliminated.

Apparatus and associated methods relate to providing a power stage having an auxiliary power switch coupled to a high-side switch or a low-side switch in parallel and turning on the auxiliary power switch earlier than turning on the high-side switch. In an illustrative example, the auxiliary power switch may be connected with the high-side switch in parallel. The on-resistance of the auxiliary power switch may be greater than the on-resistance of the high-side switch. A gate drive engine may be configured to generate gate driving signals for the switches in the power stage such that the auxiliary power switch is turned on a predetermined time duration earlier than the high-side switch. Thus, the ringing at a switch node of the power stage may be advantageously reduced or eliminated.

A low-voltage protective switching device includes: at least one line conductor length extending from a line conductor supply connection of the low-voltage protective switching device to a line conductor load connection of the low-voltage protective switching device; a neutral conductor length extending from a neutral conductor connection of the low-voltage protective switching device to a neutral conductor load connection of the low-voltage protective switching device; a mechanical bypass switch and a first mechanical circuit breaker disposed in series in the line conductor length; a second mechanical circuit breaker disposed in the neutral conductor length; a first semiconductor switching arrangement disposed in parallel to the bypass switch; and an electronic control unit that presettably actuates the bypass switch, the first mechanical circuit breaker, the second mechanical circuit breaker, and the first semiconductor switching arrangement. The first semiconductor switching arrangement includes a snubber, which includes a first capacitor.

The present disclosure relates to a driver device, which can drive a load in high temperatures. In a driver IC which drives a motor by switch-driving four output transistors, a gate driving circuit is configured to render a slew rate of a gate voltage of each output transistor to be adjustable at multiple steps while the output transistor is switching. Although a predetermined rate is set to be the slew rate of the gate voltage in a normal state, the slew rate is increased at high temperatures.

Laser driver designs that aim to reduce or eliminate the problem of fault laser firing are disclosed. Various laser driver designs presented herein are based on providing a current dissipation path that is configured to start providing a resistance for dissipating at least a portion, but preferably substantially all, of the negative current from the laser diode. Dissipating at least a portion of the negative current may decrease the unintentional increase of the voltage at the input to the laser diode and, therefore, reduce the likelihood that fault laser firing will occur. A control logic may be used to control the timing of when the current dissipation path is activated (i.e., provides the resistance to dissipate the negative current from the laser diode) and when it is deactivated.

A gate drive circuit includes: an input terminal; a first circuit path inserted into a line connecting the input terminal and a gate of a power transistor; a second circuit path connected in parallel to the first circuit path; and a third circuit path connected in parallel to the second circuit path. The first circuit path includes a gate resistor (Rgon). The second circuit path includes a first capacitor and a first resistor connected in series. The third circuit path includes a second capacitor and a second resistor connected in series. The second capacitor has a capacitance value greater than a capacitance value of the first capacitor. The second resistor has a resistance value greater than a resistance value of the first resistor. The gate resistor (Rgon) has a resistance value greater than the resistance value of the second resistor.