A charge pump having only NMOS devices charges a plurality of capacitors to a parallel charged voltage level by electrically connecting the capacitors in parallel between an input voltage node and a ground by activating a plurality of first NMOS transistor switches and a plurality of second NMOS transistor switches and deactivating a plurality of third NMOS transistor switches. The charge pump then generates a series capacitor output voltage level at a capacitor series output node by electrically connecting and discharging the capacitors in series between the input voltage node and the capacitor series output node by activating the third NMOS transistor switches and deactivating the first NMOS transistor switches and the second NMOS transistor switches.

Disclosed herein is an apparatus that includes a data serializer including a plurality of first buffer circuits configured to receive a plurality of data, respectively, and a second buffer circuit configured to serialize the plurality of data provided from the plurality of first buffer circuits. At least one of the plurality of first buffer circuits and the second buffer circuit includes: a first circuit configured to drive a first signal node to one of first and second logic levels based on an input signal, the first circuit including a first adjustment circuit configured to adjust a driving capability of the first circuit when the first circuit drives the first signal node to the first logic level; and a second circuit configured to drive the first signal node to other of the first and second logic levels.

Methods, systems, and devices for configurable input for an amplifier are described. In some examples, a circuit may be configured to operate based on a signal having a first voltage profile or a second voltage profile. For example, the first voltage profile may be associated with a range of voltages that are based on a temperature of an associated memory chip, and the second voltage profile may be associated with a voltage (or voltages) that are not associated with the temperature of the memory chip. The circuit may include one or more transistors and switches that are activated based on the voltage profile and a switch receiving a particular control signal. In some instances, the control signal may be received based on a value stored to one or more non-volatile memory elements.

To provide a semiconductor device having a thin-film BOX-SOI structure and capable of realizing a high-speed operation of a logic circuit and a stable operation of a memory circuit. A semiconductor device according to the present invention includes a semiconductor support substrate, an insulation layer having a thickness of at most 10 nm, and a semiconductor layer. In an upper surface of the semiconductor layer, a first field-effect transistor including a first gate electrode and constituting a logic circuit is formed. Further, in the upper surface of the semiconductor layer, a second field-effect transistor including a second gate electrode and constituting a memory circuit is formed. At least three well regions having different conductivity types are formed in the semiconductor support substrate. In the presence of the well regions, a region of the semiconductor support substrate below the first gate electrode and a region of the semiconductor support substrate below the second gate electrode are electrically separated from each other.

A method of generating multiple gating signals for a multi-gated input/output (I/O) system. The system includes an output level shifter and an output driver which are coupled in series between an output node of a core circuit and an external terminal of a corresponding system. The method includes: generating first and second gating signals having corresponding first and second waveforms, the first waveform transitioning from a non-enabling state to an enabling state before the second waveform transitions from the non-enabling state to the enabling state; receiving the first gating signal at the output level shifter; and receiving the second gating signal at the output driver.

A method of biasing a guard ring structure includes biasing a gate of a MOS transistor to a first bias voltage level, biasing first and second S/D regions of the MOS transistor to a power domain voltage level, biasing a gate of the guard ring structure to a second bias voltage level, and biasing first and second heavily doped regions of the guard ring structure to the power domain voltage level. Each of the first and second S/D regions has a first doping type, each of the first and second heavily doped regions has a second doping type different from the first doping type, and each of the first and second S/D regions and the first and second heavily doped regions is positioned in a substrate region having the second doping type.

A power-on reset circuit 10 has: an enhancement-type PMOS transistor P1 whose source is connected to VDD and whose drain is connected to node VJG; a depletion-type NMOS transistor D1 whose drain is connected to the node VJG; a first resistor portion having resistors R1, R2 that are connected in series, and whose one end is connected to a source of the depletion-type NMOS transistor D1, and whose another end is connected to GND, and at which a region between the resistors R1, R2 is connected to a gate of the enhancement-type PMOS transistor P1; and an inverter whose input is connected to the node VJG, and that outputs a reset signal.

A Schmitt trigger circuit includes a first and second set of transistors, a first and second feedback transistor, and a first and second circuit. The first set of transistors is connected between a first voltage supply and an output node. The first voltage supply has a first voltage. The second set of transistors is connected between the output node and a second voltage supply. The second voltage supply has a second voltage. The first feedback transistor is connected to the output node, a first node and a second node. The second feedback transistor is connected to the output node, a third node and a fourth node. The first circuit is coupled to and configured to supply the second supply voltage to the second node. The second circuit is coupled to and configured to supply the first supply voltage to the fourth node.

A multiplexer selects one of a first to a fourth data signal in response to a first to a fourth pulse. The first to fourth pulses respectively correspond to the first to fourth data signals and sequentially toggle. The multiplexer includes: (1) a NAND gate that receives the first data signal, a fourth complementary data signal that is a complementary signal of the fourth data signal, and the first pulse and outputs a first gate signal and (2) a NOR gate that receives the first data signal, the fourth complementary data signal, and a first complementary pulse that is complementary to the first pulse and outputs a second gate signal. The first data signal corresponds to a rising edge of the first pulse, and the fourth complementary data signal corresponds to a rising edge of the fourth pulse.

A homeostatic circuit for neural networks includes a feedback circuit, a first electronic switch, a synapse circuit, a second electronic switch, a third electronic switch and a first capacitor. The feedback circuit is configured to receive the total synaptic driving current and output a feedback voltage which varies with the total synaptic driving current. The first electronic switch is connected with the synapse circuit and the second electronic switch and configured to receive the feedback voltage and output a current control signal according to the feedback voltage. The second electronic switch is connected with the synapse circuit and the third electronic switch and configured to output a first voltage signal according to the current control signal. The third electronic switch is configured to adjust the total synaptic driving current in a direction opposite to variation tendency of the total synaptic driving current according to the first voltage signal.