A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.

Bit generating cells are subjected to processes that accelerate aging-related characteristics before they are configured for use in the field (enrolled). Aging improves the reliability of the cells by shifting device characteristic in a direction that improves the cell behavior with respect not only to aging but also environment variations. Outputs of the cells are read, and the cells are reconfigured with a bias to output an opposite value, and then aged for enrollment.

A circuit includes a set of multiple bit generating cells. One or more adjustable current sources is coupled to introduce perturbations into outputs of the bit generating cells. Based on the perturbations, the outputs of a subset less than all of the bit generating cells are selected, and applied as a control.

A circuit includes a set of multiple bit generating cells. One or more adjustable current sources is coupled to introduce perturbations into outputs of the bit generating cells. Based on the perturbations, the outputs of a subset less than all of the bit generating cells are selected, and applied as a control.

A circuit includes a set of multiple bit generating cells. One or more adjustable characterization circuits are coupled to inputs to the bit generating cells to affect the outputs of the bit generating cells. Based on the effect of the characterization circuit(s) on the outputs of the bit generating cells, a subset less than all of the bit generating cells is selected.

A field-programmable gate array (FPGA) architecture capable of performing immutable hardware Root-of-Trust updates and patches. In embodiments, the architecture utilizes the dielectric breakdown mechanism of magneto tunnel junctions (MTJ) to operate both as: 1) multi-time programmable (MTP) configuration memory for reconfigurable FPGA designs, and 2) one-time programmable (OTP) memory for FPGA Root-of-Trust sections.

A multi-chip package comprising: an interconnection substrate comprising an interconnection bridge embedded in the interconnection substrate, and an interconnection scheme comprising a first interconnection metal layer, a second interconnection metal layer over the first interconnection layer and the interconnection bridge, and a polymer layer between the first and second interconnection metal layers, wherein the interconnection bridge is embedded in the interconnection scheme and has sidewalls surrounded by the polymer layer; a semiconductor IC chip over the interconnection substrate and across over an edge of the interconnection bridge; a memory chip over the interconnection substrate and across over an edge of the interconnection bridge, wherein the interconnection bridge comprises a plurality of metal interconnects configured for a data bus coupling the semiconductor IC chip to the memory chip, wherein a bitwidth of the data bus between the semiconductor IC chip and the memory chip is greater than or equal to 512.

A logic integrated circuit includes a switch cell array. The switch cell array includes: a plurality of first wirings extending in a first direction; a plurality of second wirings extending in a second direction; a switch cell including a unit element including two serially connected resistance-changing elements, and a cell transistor to be connected to a shared terminal of the two resistance-changing elements; and a bit line to which the shared terminal is connected via the cell transistor. Two of the switch cells adjacent to each other in the first direction are each connected to the different first wiring and second wiring, and share the bit line, and a diffusion layer to which the bit line is connected.

Method and apparatus for monitoring and reconfiguring a programmable device are disclosed. In some implementations, the programmable device may include a processor and a plurality of satellite monitors to determine operating temperatures at various locations throughout the programmable device. When temperatures of at least some of the satellite monitors exceed a threshold, the processor may reconfigure the programmable device using an alternative configuration. The alternative configuration may provide equivalent functionality with respect to an initial configuration through a different arrangement of functional blocks within the programmable device. The new arrangement of functional blocks may reduce operating temperatures by relocating blocks to different regions of the programmable device.

A multi-chip package comprising: an interconnection substrate comprising an interconnection bridge embedded in the interconnection substrate, and an interconnection scheme comprising a first interconnection metal layer, a second interconnection metal layer over the first interconnection layer and the interconnection bridge, and a polymer layer between the first and second interconnection metal layers, wherein the interconnection bridge is embedded in the interconnection scheme and has sidewalls surrounded by the polymer layer; a semiconductor IC chip over the interconnection substrate and across over an edge of the interconnection bridge; a memory chip over the interconnection substrate and across over an edge of the interconnection bridge, wherein the interconnection bridge comprises a plurality of metal interconnects configured for a data bus coupling the semiconductor IC chip to the memory chip, wherein a bitwidth of the data bus between the semiconductor IC chip and the memory chip is greater than or equal to 512.