Techniques and apparatus for reducing low frequency power supply spurs in clock signals in a clock distribution network. One example circuit for clock distribution generally includes a plurality of logic inverters coupled in series and configured to drive a clock signal and a current-starved inverter coupled in parallel (or in series) with a logic inverter in the plurality of logic inverters.

Systems or methods of the present disclosure may provide a programmable logic fabric and a memory controller communicatively coupled to the programmable logic fabric. The systems or methods also include a physical layer and IO circuit coupled to the programmable logic fabric via the memory controller and a FIFO to receive read data from a memory device coupled to the physical layer and IO circuit. Furthermore, the FIFO is closer to the memory controller than to the physical layer and IO circuit.

Embodiments include a memory device with an improved calibration circuit. Memory device input/output pins include delay lines for adjusting the delay in each memory input/output signal path. The delay adjustment circuitry includes digital delay lines for adjusting this delay. Further, each digital delay line is calibrated via a digital delay line locked loop which enables adjustment of the delay through the digital delay line in fractions of a unit interval across variations due to differences in manufacturing process, operating voltage, and operating temperature. The disclosed techniques calibrate the digital delay lines by measuring both the high phase and the low phase of the clock signal. As a result, the disclosed techniques compensate for duty cycle distortion by combining the calibration results from both phases of the clock signal. The disclosed techniques thereby result in lower calibration error relative to approaches that measure only one phase of the clock signal.

A field programmable gate array (FPGA) with an automatic error detection and correction function for programmable logic modules includes an error checking and correction device. A check code generation circuit in the error checking and correction device performs error correcting code (ECC) encoding according to input data of corresponding programmable logic registers to generate a check code, and refreshes and writes the check code into a check code register according to a clock signal. A check circuit checks outputs of the programmable logic registers and check code registers to generate syndromes for implementing checking. A decoding circuit generates upset signals corresponding to the syndromes according to a trigger enable pulse of a trigger circuit to control a fault register to directly and asynchronously upset content to correct the error. A circuit area is greatly reduced by using the FPGA, thereby improving a degree of integration of the circuit.

A circuit receives an input signal having a first level and a second level. A logic circuit includes a finite state machine circuit, an edge detector circuit, and a timer circuit. The finite state machine circuit is configured to set a mode of operation of the circuit. The edge detector circuit is configured to detect a transition between the first and second level. The timer circuit is configured to determine whether the first or second level is maintained over an interval, which starts from a transition detected by the edge detector circuit. The finite state machine circuit is configured to change the mode of operation based on the timer circuit determining that the first or second level has been maintained over the interval.

An apparatus, a memory device, and a method for storing parameter codes with respect to asymmetric on-die-termination (ODT) are provided. The apparatus is connected to an external device via a signal line, and includes: an on-die termination (ODT) circuit set in a first ODT state; a plurality of signal pins, each of which is connected to the signal line; and an ODT control circuit configured to: identify whether a second ODT state of the external device corresponds to the first ODT state, and based on the apparatus being an asymmetric ODT in which the first ODT state and the second ODT state are different, provide an asymmetric ODT parameter code to the external device, and disable the ODT circuit when a signal is not transmitted through the signal line.

A bit line (BL) may be coupled at a first end to a BL driver (BLD) and at a second end to a BL receiver (BLR). The BL include a plurality of sections and each BL section may be coupled to at least one corresponding sectional configuration memory latch controlled by: at least one sectional word line write (WLW-k) signal, which when asserted enables data to be written into the at least one corresponding sectional configuration memory latch when a corresponding tri-stateable sectional driver (SD-k) is activated, and at least one sectional word line read (WLR-k) signal, which when asserted enables data to be from the at least one corresponding sectional configuration memory latch when the corresponding sectional pull-up (PU-k) is activated.

An application specific integrated circuit (ASIC) chip includes: a systolic array of cells; and multiple controllable bus lines configured to convey data among the systolic array of cells, in which the systolic array of cells is arranged in multiple tiles, each tile of the multiple tiles including 1) a corresponding sub array of cells of the systolic array of cells, 2) a corresponding subset of controllable bus lines of the multiple controllable bus lines, and 3) memory coupled to the subarray of cells.

An analog hashing system and method includes: an input port for accepting an input signal; a chaotic circuit including non-linear components and multiple chaotic attractors for generating an unpredictable output responsive to the input signal; a differential output port coupled to the chaotic circuit for producing an analog differential signal from the unpredictable output; and a clock circuit for producing a binary output, as a hash function, generated by the sign of the analog output in every clock cycle.

A multiplier cell is derived from a 1-bit full adder and an AND gate. The 1-bit full adder is derived from majority and/or minority gates. The majority and/or minority gates include non-linear polar material (e.g., ferroelectric or paraelectric material). A reset mechanism is provided to reset the nodes across the non-linear polar material. The multiplier cell is a hybrid of majority and/or minority gates and complementary metal oxide semiconductor (CMOS) based inverters and/or buffers. The adder uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The non-linear polar capacitor includes ferroelectric material, paraelectric material, or non-linear dielectric. Input signals are received by respective terminals of capacitors having non-linear polar material. The other terminals of these capacitors are coupled to a node where the majority function takes place for the inputs.