The present application discloses a dual-port SRAM having two ports. On a layout, pass gates connecting to the two ports are disposed near pull down transistors of corresponding memory nodes. A cell layout structure of the SRAM cell structure is centrosymmetric. In a first subunit layout structure, a pass gate and a first pull down transistor share the same active region, and an active region of the other pull down transistor is disposed between active regions of the first pull down transistor and a first pull up transistor. The present application improves the symmetry of read paths of the two memory nodes from two ports thus the symmetry of read currents, therefore the variation of the electrical performance of PMOS transistors is reduced and the stability of the electrical performance of the PMOS transistors is improved.

A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.

A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

A matrix bar code on a surface may comprise a plurality of colors and an ultraviolet layer. The matrix barcode may be a fiducial marker for conveying spatial information. The The conveyed spatial information may stem at least in part from the ultraviolet layer.

A matrix bar code on a surface may comprise a plurality of colors and an ultraviolet layer. The matrix barcode may be a fiducial marker for conveying spatial information. The The conveyed spatial information may stem at least in part from the ultraviolet layer.

A three dimensional circuit system includes first and second integrated circuit (IC) dies. The first IC die includes programmable logic circuits arranged in sectors and first programmable interconnection circuits having first router circuits. The second IC die includes non-programmable circuits arranged in regions and second programmable interconnection circuits having second router circuits. Each of the regions in the second IC die is vertically aligned with at least one of the sectors in the first IC die. Each of the second router circuits is coupled to one of the first router circuits through a vertical die-to-die connection. The first and second programmable interconnection circuits are programmable to route signals between the programmable logic circuits and the non-programmable circuits through the first and second router circuits. The circuit system may include additional IC dies. The first and second IC dies and any additional IC dies are coupled in a vertically stacked configuration.

A three dimensional circuit system includes first and second integrated circuit (IC) dies. The first IC die includes programmable logic circuits arranged in sectors and first programmable interconnection circuits having first router circuits. The second IC die includes non-programmable circuits arranged in regions and second programmable interconnection circuits having second router circuits. Each of the regions in the second IC die is vertically aligned with at least one of the sectors in the first IC die. Each of the second router circuits is coupled to one of the first router circuits through a vertical die-to-die connection. The first and second programmable interconnection circuits are programmable to route signals between the programmable logic circuits and the non-programmable circuits through the first and second router circuits. The circuit system may include additional IC dies. The first and second IC dies and any additional IC dies are coupled in a vertically stacked configuration.

The present application discloses a multi-die FPGA implementing a built-in analog circuit using an active silicon connection layer, and relates to the field of FPGA technology. The multi-die FPGA allows multiple small-scale and small-area dies to cascade to achieve large-scale and large-area FPGA products, reducing processing difficulties and improving chip production yields. Meanwhile, due to the existence of the active silicon connection layer, some circuit structures that are difficult to implement within the die and/or occupy a large die area and/or have a low processing requirement can be laid out in the silicon connection layer, solving the existing problems of making these circuit structures directly within the die. Part of the circuit structures can be implemented within the silicon connection layer and the rest in the die, which helps optimize the performance of FPGA products, improve system stability, and reduce system area.