Methods, systems, and devices for edgeless memory clusters are described. Systems, devices, and techniques are described for eliminating gaps between clusters by creating groups (e.g., domains) of clusters that are active at a given time, and using drivers within inactive clusters to perform array termination functions for abutting active clusters. Tiles on the edges of a cluster may have drivers that operate both for the cluster, and for a neighboring cluster, with circuits (e.g., a multiplexers) on the drivers to enable operations for both clusters.

An integrated circuit comprising a plurality of multiplier-accumulator circuits, connected in series, wherein the plurality of multiplier-accumulator circuits includes a first MAC circuit, including a multiplier to multiply first data and first multiplier weight data and output first product data, and an accumulator, coupled to the multiplier of the first MAC circuit, to add second data and the first product data and output first sum data. The plurality of multiplier-accumulator circuits further includes a second MAC circuit including a multiplier to multiply third data and second multiplier weight data and output second product data, and an accumulator, coupled to the multiplier of the second MAC circuit and the accumulator of the first MAC circuit, to generate and output second sum data. A first load-store register is coupled to an output of the accumulator of the first MAC circuit and an input of the accumulator of the second MAC circuit.

An integrated circuit comprising a plurality of multiplier-accumulator circuits, connected in series, wherein the plurality of multiplier-accumulator circuits includes a first MAC circuit, including a multiplier to multiply first data and first multiplier weight data and output first product data, and an accumulator, coupled to the multiplier of the first MAC circuit, to add second data and the first product data and output first sum data. The plurality of multiplier-accumulator circuits further includes a second MAC circuit including a multiplier to multiply third data and second multiplier weight data and output second product data, and an accumulator, coupled to the multiplier of the second MAC circuit and the accumulator of the first MAC circuit, to generate and output second sum data. A first load-store register is coupled to an output of the accumulator of the first MAC circuit and an input of the accumulator of the second MAC circuit.

A programmable integrated circuit device able to be selectively programmed to perform one or more logic functions includes multiple configurable logic blocks (“LBs”), routing fabric, and a nonvolatile memory (“NVM”). While the configurable LBs are able to be selectively programmed to perform one or more logic functions, the routing fabric selectively routes information between the configurable LBs and input/output ports based on a routing configuration signals. The NVM, such as magnetoresistive random access memory (“MRAM”), phase-change memory, or ferroelectric RAM (“FeRAM”), is flexibly organized to contain a configuration NVM storage and a user NVM storage, wherein the user NVM storage is a word addressable memory capable of facilitating random memory access.

A programmable integrated circuit device able to be selectively programmed to perform one or more logic functions includes multiple configurable logic blocks (“LBs”), routing fabric, and a nonvolatile memory (“NVM”). While the configurable LBs are able to be selectively programmed to perform one or more logic functions, the routing fabric selectively routes information between the configurable LBs and input/output ports based on a routing configuration signals. The NVM, such as magnetoresistive random access memory (“MRAM”), phase-change memory, or ferroelectric RAM (“FeRAM”), is flexibly organized to contain a configuration NVM storage and a user NVM storage, wherein the user NVM storage is a word addressable memory capable of facilitating random memory access.

An error correction system is disclosed. The error correction system is applied to a storage system. The error correction system generates X first operation codes, Y second operation codes and a third operation code based on the storage system. The error correction system includes an error state determining circuit and M decoding circuits. The error state determining circuit is configured to identify a current error state. When a plurality of pieces of data have a 1-bit error, the M decoding circuits are configured to execute decoding processing on the X first operation codes and the Y second operation codes, to obtain whether there is erroneous data in the bytes corresponding to the decoding circuits and locate a bit to which the erroneous data belongs.

There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120)comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an Al.sub.yGa.sub.y-1N layer structure (380), wherein 0<y≤1; a GaN layer structure (382); and a crystal transition layer structure (386) arranged on the Si substrate. The crystal transition layer comprises: a plurality of vertical nanowire structures (388) perpendicularly arranged on the Si substrate, and an Al.sub.xGa.sub.x-1N layer structure (389), wherein 0≤x<1, wherein the Al.sub.xGa.sub.x-1N layer structure is arranged to vertically and laterally enclose the vertical nanowire structures. There is also provided an Al processing system comprising said FPGA device (100).

There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120)comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an Al.sub.yGa.sub.y-1N layer structure (380), wherein 0<y≤1; a GaN layer structure (382); and a crystal transition layer structure (386) arranged on the Si substrate. The crystal transition layer comprises: a plurality of vertical nanowire structures (388) perpendicularly arranged on the Si substrate, and an Al.sub.xGa.sub.x-1N layer structure (389), wherein 0≤x<1, wherein the Al.sub.xGa.sub.x-1N layer structure is arranged to vertically and laterally enclose the vertical nanowire structures. There is also provided an Al processing system comprising said FPGA device (100).

A memory interface circuit includes first and second memory controller circuits that asynchronously receive requests for memory accesses to first and second storage circuits. The memory interface circuit also includes first and second clock gate circuits that disable and then reenable first and second clock signals in response to a clock enable signal. The first and the second memory controller circuits perform the memory accesses to the first and the second storage circuits synchronously in response to the first and the second clock signals that have been reenabled by the first and the second clock gate circuits.

A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.