An apparatus is disclosed that implements phase-locked loop (PLL) calibration. In an example aspect, the apparatus includes a PLL and a signal extraction path. The PLL includes an error determiner with an error output node and a loop filter with a filter input node and a filter output node. The filter input node is coupled to the error output node. The PLL also includes a voltage-controlled oscillator (VCO) with a VCO input node. The VCO input node is coupled to the filter output node. The PLL further includes a PLL tap node coupled between the filter output node and the VCO input node. The signal extraction path includes at least one switch, with the signal extraction path coupled to the PLL tap node.

An apparatus is described that, according to an exemplary embodiment, has an RF oscillator for generating an RF oscillator signal at a first frequency and a frequency divider having a division ratio that is fixed during operation. The frequency divider is supplied with the RF oscillator signal and is configured to provide an oscillator signal at a second frequency. The apparatus further has a monitor circuit, to which the oscillator signal at the second frequency is supplied and which is configured to measure the second frequency and to provide at least one digital value that is dependent on the second frequency of the oscillator signal. The at least one digital value is provided on a test contact.

An apparatus is described that, according to an exemplary embodiment, has an RF oscillator for generating an RF oscillator signal at a first frequency and a frequency divider having a division ratio that is fixed during operation. The frequency divider is supplied with the RF oscillator signal and is configured to provide an oscillator signal at a second frequency. The apparatus further has a monitor circuit, to which the oscillator signal at the second frequency is supplied and which is configured to measure the second frequency and to provide at least one digital value that is dependent on the second frequency of the oscillator signal. The at least one digital value is provided on a test contact.

A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

Methods, systems, and devices for section-based data protection in a memory device are described. In one example, a memory device may include a set memory sections each having memory cells configured to be selectively coupled with access lines of the respective memory section. A method of operating the memory device may include selecting at least one of the sections for a voltage adjustment operation based on a determined value of a timer, and performing the voltage adjustment operation on the selected section by activating each of a plurality of word lines of the selected section. The voltage adjustment operation may include applying an equal voltage to opposite terminals of the memory cells, which may allow built-up charge, such as leakage charge accumulating from access operations of the selected memory section, to dissipate from the memory cells of the selected section.

Methods, systems, and devices for section-based data protection in a memory device are described. In one example, a memory device may include a set memory sections each having memory cells configured to be selectively coupled with access lines of the respective memory section. A method of operating the memory device may include selecting at least one of the sections for a voltage adjustment operation based on a determined value of a timer, and performing the voltage adjustment operation on the selected section by activating each of a plurality of word lines of the selected section. The voltage adjustment operation may include applying an equal voltage to opposite terminals of the memory cells, which may allow built-up charge, such as leakage charge accumulating from access operations of the selected memory section, to dissipate from the memory cells of the selected section.

An apparatus includes a plurality of latches and a plurality of logic gates. Each latch may be setable and resettable. The logic gates may be connected to the latches to form a multi-modulus divider that generates an output clock signal by dividing an input clock signal in response to a command signal. Each latch may be commanded into a corresponding initial state while the command signal is in an initialization state. Each latch is generally free to change states while the command signal is in a run state. A modulus division operation of the multi-modulus divider may start upon an initial edge of the input clock signal after the command signal changes from the initialization state to the run state.

An apparatus includes a plurality of latches and a plurality of logic gates. Each latch may be setable and resettable. The logic gates may be connected to the latches to form a multi-modulus divider that generates an output clock signal by dividing an input clock signal in response to a command signal. Each latch may be commanded into a corresponding initial state while the command signal is in an initialization state. Each latch is generally free to change states while the command signal is in a run state. A modulus division operation of the multi-modulus divider may start upon an initial edge of the input clock signal after the command signal changes from the initialization state to the run state.

The present technology relates to a detection device and a detection method that are designed to be capable of detecting a locked state with a higher degree of accuracy.

A first edge detector detects whether there is an edge of a second clock signal in one cycle of a first clock signal. A second edge detector detects whether there is an edge of the first clock signal in one cycle of the second clock signal. The logic circuit performs a logical operation on a detection result from the first edge detector and a detection result from the second edge detector. The present technology can be applied to a circuit or the like that detects a locked state of a PLL circuit, for example.