An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.

An image acquisition system 1 includes: a light source 3 which outputs illumination light; an optical scanner 7 which scans a sample S with the illumination light; an optical scanner control unit 9; a detection optical system 15, 17 which focuses fluorescence from the sample S; an imaging device 19 which has a light receiving surface 19c in which a plurality of pixel rows 19d are arranged, and an imaging control section 19b, and which can perform signal readout of each of the plurality of pixel rows 19d from the light receiving surface 19c; and a calculation unit 21 which calculates an interval of signal readout between adjacent pixel rows 19d, based on a moving speed of an illuminated region on the light receiving surface 19c; the imaging control section 19b controls signal readout of each pixel row 19d, based on the interval of the signal readout thus calculated.

An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer; a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.

A pixel cell, and a method of use thereof, the pixel cell including: an output, a photosensor configured to generate a first measuring current in a first measurement cycle and a second measuring current in a second measurement cycle as a function of radiation, an output node, a power storage device configured so that in a first operating mode a current can be injected by the power storage device as a function of the first measuring current, and so that in a second operating mode the power storage device is configured to hold the injected current so that the injected current can be detected at the output node, and a switching unit configured to form a difference between the injected current and the second measuring current at the output node in a reading cycle and to couple the output node to the output.

An image acquisition system 1 includes: a light source 3 which outputs illumination light; an optical scanner 7 which scans a sample S with the illumination light; an optical scanner control unit 9; a detection optical system 15, 17 which focuses fluorescence from the sample S; an imaging device 19 which has a light receiving surface 19c in which a plurality of pixel rows 19d are arranged, and an imaging control section 19b, and which can perform signal readout of each of the plurality of pixel rows 19d from the light receiving surface 19c; and a calculation unit 21 which calculates an interval of signal readout between adjacent pixel rows 19d, based on a moving speed of an illuminated region on the light receiving surface 19c; the imaging control section 19b controls signal readout of each pixel row 19d, based on the interval of the signal readout thus calculated.

An image acquisition system 1 includes: a light source 3 which outputs illumination light; an optical scanner 7 which scans a sample S with the illumination light; an optical scanner control unit 9; a detection optical system 15, 17 which focuses fluorescence from the sample S; an imaging device 19 which has a light receiving surface 19c in which a plurality of pixel rows 19d are arranged, and an imaging control section 19b, and which can perform signal readout of each of the plurality of pixel rows 19d from the light receiving surface 19c; and a calculation unit 21 which calculates an interval of signal readout between adjacent pixel rows 19d, based on a moving speed of an illuminated region on the light receiving surface 19c; the imaging control section 19b controls signal readout of each pixel row 19d, based on the interval of the signal readout thus calculated.

A pixel cell, and a method of use thereof, the pixel cell including: an output, a photosensor configured to generate a first measuring current in a first measurement cycle and a second measuring current in a second measurement cycle as a function of radiation, an output node, a power storage device configured so that in a first operating mode a current can be injected by the power storage device as a function of the first measuring current, and so that in a second operating mode the power storage device is configured to hold the injected current so that the injected current can be detected at the output node, and a switching unit configured to form a difference between the injected current and the second measuring current at the output node in a reading cycle and to couple the output node to the output.

The present disclosure relates to a solid-state imaging device capable of receiving light entering a gap between pixel regions of imaging units by the pixel region when a plurality of imaging units is arranged, a method of manufacturing the same, and an electronic device. A CMOS image sensor includes a pixel region formed of a plurality of pixels. A convex lens is provided for each of a plurality of CMOS image sensors. A plurality of CMOS image sensors is arranged on a supporting substrate. The present disclosure is applicable to a solid-state imaging device and the like in which a plurality of CMOS image sensors is arranged on the supporting substrate, for example.

The present invention provides a compact row decoder with multiple voltage support. The row decoder may include a global driver and a plurality of row-level drivers. The global driver may include one or more voltage level shifters that are operable to provide multiple voltages required to drive each of the plurality of row-level drivers. The plurality of row-level drivers each may include only one voltage level shifter. In an example, the row-level driver includes an address decoder implemented in a digital domain providing an address selection signal, a voltage level shifter to convert the address selection signal to an analog domain, and a row driver receiving driving signals from the global driver. The row driver has no voltage level shifter contained therein. Thus, the row-level drivers and the row decoder may be very compact. The present invention further provides a CMOS image sensor including the row decoder and a method of operating the CMOS image sensor.

A pixel cell, and a method of use thereof, the pixel cell including: an output, a photosensor configured to generate a first measuring current in a first measurement cycle and a second measuring current in a second measurement cycle as a function of radiation, an output node, a power storage device configured so that in a first operating mode a current can be injected by the power storage device as a function of the first measuring current, and so that in a second operating mode the power storage device is configured to hold the injected current so that the injected current can be detected at the output node, and a switching unit configured to form a difference between the injected current and the second measuring current at the output node in a reading cycle and to couple the output node to the output.