An image sensor has a plurality of pixels arranged in a row direction and in a column direction. Each pixel comprises a color filter that has a portion with a low transmissivity and a portion with a high transmissivity, and a photoelectric conversion element that includes a first photoelectric conversion cell which receives light transmitting through the portion with the low transmissivity of the color filter, and a second photoelectric conversion cell which receives light transmitting through the portion with the high transmissivity of the color filter. The plurality of pixels are arranged such that positions of the portions with the low transmissivity for pixels of one color are identical among the plurality of pixels, and the portions with the low transmissivity are positioned adjacent to each other between adjacent pixels of different colors in the row direction only.

An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

An image processing apparatus includes a first acquisition unit that acquires a first pixel signal output from a first pixel, a second acquisition unit that acquires a second pixel signal output from a second pixel having a size smaller than that of the first pixel, a temperature detection unit that detects temperature; a composition gain determination unit that determines a composition gain corresponding to the detected temperature, and a composition unit that composes the first pixel signal and the second pixel signal multiplied by the composition gain.

An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels.

A camera assembly, an image acquisition method, and a mobile terminal are provided. The image acquisition method is applied to a mobile terminal including the camera assembly provided in this disclosure, and the image acquisition method includes: acquiring first image data derived from an exposure of a filtering and photosensitive module in the camera assembly and second image data derived from an exposure of a photosensitive module in the camera assembly; generating a target image from the first image data and the second image data.

A unit pixel circuit includes a first photodiode, a second photodiode different from the first photodiode, a first floating diffusion node in which charges generated in the first photodiode are accumulated, a second floating diffusion node in which charges generated in the second photodiode are accumulated, a capacitor connected to the first floating diffusion node and a first voltage node, and accumulating overflowed charges of the first photodiode, a first switch transistor connecting the first floating diffusion node to a third floating diffusion node, a reset transistor connecting the third floating diffusion node to a second voltage node, a gain control transistor connecting the second floating diffusion node to the third floating diffusion node, and a second switch transistor connected to the first voltage node and the second voltage node.

A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

An image sensor comprises: a pixel region including a plurality of microlenses arranged in a matrix, and a plurality of photoelectric conversion portions provided for each of the microlenses; a plurality of amplifiers that apply a plurality of different gains to signals output from the pixel region; and a scanning circuit that scans the pixel region so that a partial signal and an added signal are read out, the partial signal being a signal from some of the plurality of photoelectric conversion portions, and the added signal being a signal obtained by adding the signals from the plurality of photoelectric conversion portions.

Pulsed hyperspectral, fluorescence, and laser mapping imaging without input clock or data transmission clock is disclosed. A system includes an emitter for emitting pulses of electromagnetic radiation and an image sensor comprising a pixel array for sensing reflected electromagnetic radiation. The system includes a plurality of bidirectional data pads and a controller in communication with the image sensor. The system is such that at least a portion of the pulses of electromagnetic radiation emitted by the emitter comprises one or more of: electromagnetic radiation having a wavelength from about 513 nm to about 545 nm, from about 565 nm to about 585 nm, from about 900 nm to about 1000 nm, an excitation wavelength of electromagnetic radiation that causes a reagent to fluoresce, or a laser mapping pattern.

An image processing device is disclosed. The image processing device includes at least one first pixel having a first sensitivity, a second pixel having a second sensitivity different from the first sensitivity, a processor, and a synthesizer. The processor calculates a sampling position of the at least one first pixel and a sampling position of the second pixel, determines a reference position and adjusts the sampling position of the at least one first pixel or the second pixel based on the reference position.