In order to realize a photoelectric conversion device having a photoelectric conversion element for outputting a signal according to the incidence of a photon that has a low power consumption, the photoelectric conversion device includes: at least one pixel including a photoelectric conversion element that outputs a signal according to an incident photon; a photon counter that measures the number of photons incident to the pixel; a time counter that measures a time until the photon counter reaches a first threshold after starting measurement and outputs the measured time as a pixel value; and a first threshold changing unit configured to change the first threshold.

In order to achieve a photoelectric conversion device that enables suppressing the lowering in tone, a photoelectric conversion device has a pixel including a photoelectric conversion element that outputs a signal according to an incident photon; a photon counter that outputs a measured value according to the number of photons incident to the pixel, a time counter that measures a time until the measured value of the photon counter reaches a first threshold after the photon counter starts the measurement, and a sensitivity adjustment unit configured to perform a sensitivity change for the pixel during a time until the measured value of the photon counter reaches the first threshold after the photon counter starts the measurement.

An image sensor includes a pixel including a first floating diffusion and a second floating diffusion, generating a first pixel signal based on a quantity of charge of the first floating diffusion, and generating a second pixel signal based on the quantity of charge of the first floating diffusion and a quantity of charge of the second floating diffusion; a column line connected to the pixel and transmitting the first pixel signal or the second pixel signal; and a readout circuit connected to the column line and generating an image signal based on a plurality of comparison results including a first comparison result obtained by comparing the first pixel signal with a first reference signal, a second comparison result obtained by comparing the second pixel signal with a first reference signal, and a third comparison result obtained by comparing the second pixel signal with a second reference signal.

An image sensor includes a pixel including a first floating diffusion and a second floating diffusion, generating a first pixel signal based on a quantity of charge of the first floating diffusion, and generating a second pixel signal based on the quantity of charge of the first floating diffusion and a quantity of charge of the second floating diffusion; a column line connected to the pixel and transmitting the first pixel signal or the second pixel signal; and a readout circuit connected to the column line and generating an image signal based on a plurality of comparison results including a first comparison result obtained by comparing the first pixel signal with a first reference signal, a second comparison result obtained by comparing the second pixel signal with a first reference signal, and a third comparison result obtained by comparing the second pixel signal with a second reference signal.

A photoelectric conversion device has a pixel including a photoelectric conversion circuit configured to output a signal in response to incidence of a photon. The photoelectric conversion device includes a first measurement circuit, a second measurement circuit, and a change circuit. The first measurement circuit is configured to measure the signal output from the pixel. The second measurement circuit is configured to measure a time from when the first measurement circuit starts to measure the signal until when a measurement value of the first measurement circuit reaches a first threshold. The change circuit is configured to change, for at least one of a plurality of the pixels, an upper measurement limit value up to which the signal is countable.

In a case where illuminance is high, an error between the number of photons per frame calculated from time information and the number of photons and the actually expected number of photons per frame is reduced. In a time counter that counts a clock from the start of exposure in one frame, one-count time in the clock is switched depending on the illuminance. In a case where a pixel counter is saturated within a period of one frame, the illuminance is determined to be high, and a high-illuminance clock in which one-count time is set more minutely in the first half of one frame is used to count. In a case where the illuminance is not determined to be high, a normal clock is used to count.

In a system that captures image data, a distance to an object is measured without adding a range sensor.

A light emitting unit applies invisible light in synchronization with a predetermined light emission control signal. An invisible light pixel photoelectrically converts reflected light with respect to the invisible light to generate a pulse signal as an invisible light pulse signal. A visible light pixel photoelectrically converts visible light to generate a pulse signal as a visible light pulse signal. A counting unit performs processing for counting a number of the visible light pulse signals and perform processing for counting, in synchronization with the light emission control signal, a number of the invisible light pulse signals.

A semiconductor device capable of realizing a capacitative element of which a capacitance value has low bias dependence and of which capacitance density is high without lowering operating voltage is provided. The semiconductor device includes: a semiconductor substrate; a first capacitative element stacked on the semiconductor substrate; and a second capacitative element which is stacked on an opposite side to a side of the semiconductor substrate of the first capacitative element and of which a capacitance value has bias characteristics being opposite to bias characteristics of a capacitance value of the first capacitative element, wherein the first capacitative element and the second capacitative element are connected in parallel.

A semiconductor device capable of realizing a capacitative element of which a capacitance value has low bias dependence and of which capacitance density is high without lowering operating voltage is provided. The semiconductor device includes: a semiconductor substrate; a first capacitative element stacked on the semiconductor substrate; and a second capacitative element which is stacked on an opposite side to a side of the semiconductor substrate of the first capacitative element and of which a capacitance value has bias characteristics being opposite to bias characteristics of a capacitance value of the first capacitative element, wherein the first capacitative element and the second capacitative element are connected in parallel.

An image capturing unit comprises a photoelectric conversion element configured to detect an address event indicating a change in luminance in each pixel address, an integration unit configured to generate a frame image based on an integrated value obtained by integrating an address event for each pixel, and a determination unit configured to determine whether an integrated value has reached a predetermined threshold value. The determination unit is configured to stop integration in the integration unit when it determines that the integrated value has reached a predetermined threshold value.