Among a plurality of time measurement circuits configured to measure a time until a pixel counter saturates in the imaging sensor having the signal multiplication pixel structure, at least one time measurement circuit functions as a time counter that obtains a time from the pixel counter starting count of pulses until saturation and the other time measurement circuits function as a difference counter that obtains a difference between a time until a certain pixel counter saturates and a time until another pixel counter different from the certain pixel counter saturates. Then, a time from the pixel counter associated with the time measurement circuit that functions as a difference counter starting count of the pulses until saturation is found by calculation processing.

According to an embodiment, an image sensor using photon counting includes: a plurality of sub-pixels arranged in one pixel; pulse generators which are respectively connected to the plurality of sub-pixels, and are configured to generate pulse signals based on electric signals generated based on photons incident on the plurality of sub-pixels; a synchronizer and serializer configured to synchronize and serialize pulse signals respectively output from the pulse generators; and a counter configured to count and output a number of the pulse signals that are synchronized and serialized.

A first terminal is connected to a first electrode of an APD. First and second circuit units and are connected in parallel with each other to a second electrode of the APD. A second terminal is connected to the second electrode via the first circuit unit. A third terminal is connected to the second electrode via the second circuit unit. A first switch, a resistor, the second electrode, and the second terminal are connected in series with each other. A second switch and a capacitor are connected in parallel with each other to the second electrode. The second switch, the second electrode, and a third terminal are connected in series with each other. A TIA is connected in series with the capacitor and is connected to the second electrode via the capacitor.

A photoelectric conversion device includes a photoelectric conversion unit, a light value holding unit that holds light values based on signal charges generated during a first exposure period and a second exposure period having at least one of start timing and end timing different from that of the first exposure period, a comparison unit that compares the light value based on the signal charge generated during the first exposure period with the light value based on the signal charge generated during the second exposure period, and a control unit that sets a third exposure period and a fourth exposure period having at least one of the start timing and end timing different from that of the third exposure period on the basis of a comparison result of the comparison unit. The third and fourth exposure periods are less than at least one of the first and second exposure periods.

A processing apparatus includes a first storage unit for storing first array data that is based on output values of a plurality of pixels arranged in an array, a second storage unit having second array data stored therein to be used for correction of the output values from the plurality of pixels, and a correction unit including a calculation unit that corrects an output value of at least one pixel of the plurality of pixels based on the first array data and the second array data.

A photoelectric conversion apparatus and the like that enables a predetermined determination in response to the incidence of photons is provided. The photoelectric conversion apparatus comprising a pixel provided with a photoelectric conversion unit that outputs a signal in response to the incidence of a photon; and a plurality of processing units configured to correspond to the pixel, wherein the processing unit has a first counter circuit configured to count an output signal from the pixel during a predetermined time period and a first memory configured to store a count value counted by the first counter circuit as a second count value, and wherein the processing unit outputs a determination result obtained by comparing a first count value output by the first counter circuit and a predetermined threshold that has been set based on the second count value read out from the first memory.

A photoelectric conversion apparatus and the like that enables a predetermined determination in response to the incidence of photons is provided. The photoelectric conversion apparatus comprising a pixel provided with a photoelectric conversion unit that outputs a signal in response to the incidence of a photon; and a plurality of processing units configured to correspond to the pixel, wherein the processing unit has a first counter circuit configured to count an output signal from the pixel during a predetermined time period and a first memory configured to store a count value counted by the first counter circuit as a second count value, and wherein the processing unit outputs a determination result obtained by comparing a first count value output by the first counter circuit and a predetermined threshold that has been set based on the second count value read out from the first memory.

An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Provided is a semiconductor device including: first signal generation units arranged so as to form rows and columns and corresponding to pixels configured to output a signal in response to incidence of light, each of the first signal generation units being configured to output a first digital signal in response to an output from a corresponding pixel; second signal generation units arranged corresponding to at least a part of the rows and the columns, each of the second signal generation units being configured to output a second digital signal having a predetermined digital value; and a readout unit configured to output a signal based on at least one of the first digital signal and the second digital signal that is output from a selected part of the first signal generation units and the second signal generation units.

To output event information at high sensitivity and high speed with a simple configuration. An imaging device includes: a plurality of pixels each having a plurality of photoelectric conversion elements that photoelectrically converts incident light to generate an electric signal; a detecting section that outputs a detection signal in a case where an absolute value of a change amount of the electric signal in a pixel of the plurality of pixels exceeds a predetermined threshold; a signal processing section that performs predetermined signal processing on the basis of the detection signal output from the detecting section; an AZ output section that outputs an auto-zero signal for initializing the detecting section; a time code generator that outputs a time code changing at a predetermined cycle; a first holding circuit that holds the time code output from the time code generator when the auto-zero signal is output; a second holding circuit that holds the time code output from the time code generator when the detection signal is output; and a transfer section that transfers the time code held in the first holding circuit and the time code held in the second holding circuit to the signal processing section in association with each other.