The scattering of a rare earth hydroxide is suppressed, and the loss of bond strength between a first ceramic member and a second ceramic member is reduced.

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other, wherein the joint layer includes a perovskite oxide represented by ABO.sub.3 (wherein A is a rare earth element, and B is Al) and includes no rare earth single oxide containing exclusively a rare earth element and oxygen.

A processing system includes a thermo viewer 51 which measures a temperature distribution over a top surface of a semiconductor wafer; a temperature measuring device 14 which measures, for each of divided areas of the semiconductor wafer, a temperature of a portion in the divided area; a median value calculating unit 202 which calculates, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution measured by the thermo viewer 51; an offset calculating unit 204 which calculates, for each divided area, a difference between the median value and the temperature of the portion as an offset; and a temperature control unit 205 which controls, for each divided area, the temperature of the divided area such that the median value becomes equal to a set temperature, based on the offset and the temperature measured by the temperature measuring device 14.

There is provided an electrostatic chuck heater including: a ceramic plate having a first surface for bearing a wafer on which a film is to be deposited, and a second surface opposite the first surface, and including ESC electrodes and a heater electrode which are built therein; a ceramic shaft which is attached to the second surface of the ceramic plate and which comprises an internal space for accommodating an ESC rod connected to the ESC electrodes and a heater rod connected to the heater electrode; a plurality of lift pin holes penetrating the ceramic plate from the first surface to the second surface; and a plurality of protrusions arranged on the first surface of the ceramic plate with equal spacing from each other and with rotational symmetry about a central axis of each of the lift pin holes.

A heater includes a base body and a resistance heating element. The base body is configured by an insulating material and includes a top surface on which a wafer is placed. The resistance heating element extends in the base body along the top surface. A top surface of the resistance heating element and the base body are in contact with each other. A vacuum or gas-filled gap is interposed between a side surface of the resistance heating element and the base body.

A heater for a semiconductor processing chamber is disclosed that includes a ceramic body, and a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil having an inner central sector and an outer central sector, the inner central sector having a plurality of first peaks and the outer central sector having a plurality of second peaks, wherein the number of first peaks is less than about fifty-six, and the number of second peaks is less than about eighty.

The invention comprises an infrared source and method of use thereof comprising the steps of: (1) providing a solid state source comprising: an electrically conductive zinc oxide film having a thickness of less than five micrometers and a film of metal oxide particles, the metal oxide particles comprising a mean diameter of less than ten micrometers; (2) passing an alternating, pulsed current through the zinc oxide film, the pulsed current heating the zinc oxide film to greater than 700 C. in less than twenty milliseconds using less than one Watt, which results in a first infrared emission from the zinc oxide film; and (3) heating the film of metal oxide particles, using thermal conduction from the zinc oxide film, to at least 700 C., resultant in a second infrared emission from the film of oxide particles, where the first and second infrared emissions exit the source through an emission side.

A heater system may include a ceramic heater and a drive device. The ceramic heater may include a ceramic substrate and a resistance heating element. The ceramic substrate may include an upper surface. The resistance heating element may extend in an internal portion or on a surface of the ceramic substrate along the upper surface of the ceramic substrate. The drive device may include a main driving part, which supplies the main power to the entirety of the resistance heating element, and an additional driving part, which supplies additional power to a divided region that is a portion of the resistance heating element, by superimposing it on the main power.

Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a low volatile coating. The low volatile coating can include a rare earth metal-containing layer that coats all surfaces of a component (e.g., a high temperature heater).

A system for processing substrates is described. In one embodiment, the system comprises a process chamber, at least one electrical resistance heater, and at least one Coanda effect gas injector.

The invention comprises an infrared source and method of use thereof comprising the steps of: (1) providing a solid state source comprising: an electrically conductive zinc oxide film having a thickness of less than five micrometers and a film of metal oxide particles, the metal oxide particles comprising a mean diameter of less than ten micrometers; (2) passing an alternating, pulsed current through the zinc oxide film, the pulsed current heating the zinc oxide film to greater than 700 C. in less than twenty milliseconds using less than one Watt, which results in a first infrared emission from the zinc oxide film; and (3) heating the film of metal oxide particles, using thermal conduction from the zinc oxide film, to at least 700 C., resultant in a second infrared emission from the film of oxide particles, where the first and second infrared emissions exit the source through an emission side.