A connected light node (CLN) induction light ballast module for powering an induction lamp includes a printed circuit board having components mounted thereon and an earth ground region electrically isolated from a PCB ground region. A heat sink is disposed on a lower layer of the printed circuit board and electrically connected to the earth ground region, wherein a parasitic capacitance occurs between the printed circuit board ground region and the heat sink. A capacitive shield sandwiched by a lower insulating pad and an upper insulating pad is electrically isolated from the heat sink supporting the shield. A damping network electrically connects the capacitive shield to the PCB ground region. Switch-mode power converters are mounted above the upper insulating pad and the shield. The damping network suppresses noise by a parasitic capacitance between the PCB ground region and the heat sink during high frequency power converter operation.

A semiconductor integrated circuit device includes a component built-in board in which at least a first core layer on which a first electronic component is mounted, a second core layer on which a second electronic component is mounted, an adhesive layer arranged between the first core layer and the second core layer, and wiring layers are stacked; a third electronic component mounted in a first core layer side of the component built-in board and electrically connected to the at least one of the first and second electronic components through the wiring layers; and an external connection terminal formed in a second core layer side of the component built-in board and electrically connected to at least one of the first and second electronic components.

First and second semiconductor devices and first and second bypass circuits are mounted on a printed wiring board. The first bypass circuit and the second bypass circuit are provided closer to the first semiconductor device and to the second semiconductor device, respectively. The first bypass circuit has one end connected to a power plane through a first power supply via and the other end connected to a ground plane through a first ground via. The second bypass circuit has one end connected to the power plane through a second power supply via and the other end connected to the ground plane through a second ground via. The ground plane has a slit between the connecting portions of the first and second ground vias to increase the impedance between the connecting portions of the first and the second ground vias. Thus, jitters caused by power supply noise can be reduced.

A differential transmission line includes a sheath, a first conductive structure, a second conductive structure, and a resistive layer. The first conductive structure is disposed along the differential transmission line and within the sheath, and contributes to formation of a three-dimensional electromagnetic field. The second conductive structure is disposed along the differential transmission line and within the sheath, and contributes to formation of the three-dimensional electromagnetic field. The resistive layer is aligned to be substantially perpendicular to an electric field component of a first mode of the three-dimensional electromagnetic field, and to provide absorption of an electric field component of a second mode of the three-dimensional electromagnetic field.

A microelectronic device includes a die less than 300 microns thick, and an interface tile. Die attach leads on the interface tile are electrically coupled to die terminals on the die through interface bonds. The microelectronic device includes an interposer between the die and the interface tile. Lateral perimeters of the die, the interposer, and the interface tile are aligned with each other. The microelectronic device may be formed by forming the interface bonds and an interposer layer, while the die is part of a wafer and the interface tile is part of an interface lamina. Kerfs are formed through the interface lamina, through the interposer, and partway through the wafer, around a lateral perimeter of the die. Material is subsequently removed at a back surface of the die to the kerfs, so that a thickness of the die is less than 300 microns.

RF absorbing structures include a dielectric layer, such as polycarbonate, and one or more layers of a carbon resistive material, such as carbon ink. The RF absorbing structures can further include one or more layers of a conductive material, such as silver ink.

The present disclosure is related to a display device and a circuit board (200). The display device comprises a light-emitting module (100), a circuit board (200) and a conductive structure (300). The surface of the light-emitting module (100) is provided with a conductive portion (101). The circuit board (200) is arranged on a back face (102) of the light-emitting module (100), and has a first surface (201) close to the light-emitting module (100). The first surface (201) of the circuit board (200) is provided with an exposed external conductive layer (210), and the external conductive layer (210) is electrically connected to a ground wire of the circuit board (200). The conductive structure (300) is located between the circuit board (200) and the light-emitting module (100), and makes the external conductive layer (210) electrically connect to the conductive portion (101).

An electronic control device includes a conductive casing; a circuit board which is provided in the casing, and on which an electronic component including an integrated circuit is mounted; and a conductive conductor component that is provided on the circuit board, is disposed at a position higher than the electronic component, and has an elongated shape, in which a distance between the conductor component and the casing is shorter than a distance between the conductor component and the circuit board.

A semiconductor integrated circuit device (101) includes a component built-in board (21) in which at least a first core layer (Co21) on which a first electronic component (C21) is mounted, a second core layer (Co22) on which a second electronic component (C22) is mounted, an adhesive layer (Ad21) arranged between the first core layer (Co21) and the second core layer (Co22), and wiring layers (L21-L28) are stacked; a third electronic component (SoC) mounted in a first core layer (Co21) side of the component built-in board (21) and electrically connected to at least one of the first and second electronic components (C21, C22) through the wiring layers (L21 to L28); and an external connection terminal (BE) formed in a second core layer (Co22) side of the component built-in board (21) and electrically connected to at least one of the first and second electronic components (C21, C22).

A connected light node (CLN) induction light ballast module for powering an induction lamp includes a printed circuit board having components mounted thereon and an earth ground region electrically isolated from a PCB ground region. A heat sink is disposed on a lower layer of the printed circuit board and electrically connected to the earth ground region, wherein a parasitic capacitance occurs between the printed circuit board ground region and the heat sink. A capacitive shield sandwiched by a lower insulating pad and an upper insulating pad is electrically isolated from the heat sink supporting the shield. A damping network electrically connects the capacitive shield to the PCB ground region. Switch-mode power converters are mounted above the upper insulating pad and the shield. The damping network suppresses noise by a parasitic capacitance between the PCB ground region and the heat sink during high frequency power converter operation.