A method for manufacturing a dual conductor laminated substrate includes providing a first laminate including a first insulating layer and a first conductive layer; defining a first trace pattern including one or more traces in the first laminate; providing a second laminate including a second insulating layer and a second conductive layer; defining a second trace pattern including one or more traces in the second laminate; defining access holes in the second insulating layer; at least one of depositing and stenciling a conductive material in the access holes of the second insulating layer; and aligning and attaching the first laminate to the second laminate to create a laminated substrate.

A vertical integrated photonics chiplet assembly includes a package substrate and an external device connected to a top surface of the package substrate. A photonics chip is disposed within the package substrate. The photonics chip includes optical coupling devices positioned at a top surface of the photonics chip. A plurality of conductive via structures are disposed within the package substrate in electrical connection with electrical circuits within the photonics chip. The plurality of conductive via structures are electrically connected through the package substrate to the external device. An opening is formed through the top surface of the substrate to expose a portion of the top surface of the photonics chip at which the optical coupling devices are positioned. An optical fiber array is disposed and secured within the opening such that a plurality of optical fibers of the optical fiber array optically couple to the optical coupling devices.

A copper clad laminate and a method to manufacture the same are provided. In one general aspect, a copper clad laminate include a first copper clad layer on a first surface of an insulating layer, and a second copper clad layer on a second surface of the insulating layer. The second copper clad layer includes polymer resin layer, a second copper layer, and a carrier foil layer.

Disclosed herein is a method of drilling in a multilayer printed circuit board. The method includes drilling a one hole; directing electromagnetic radiation having at least one wavelength with higher energy than a work-function the metal layer toward the hole, and thus causing the metal layer to emit free electrons; and measuring the quantity or intensity of electrically charged particles derived from the emitted free electrons, to detect the extent of exposure or disappearance of the metal layer during drilling.

A substrate bonding structure includes a first substrate including a first resin substrate that melts by heating, a second substrate having a second resin substrate that melts by heating, and an overlapping portion with the first substrate. The overlapping portion between the first substrate and the second substrate includes a hole continuously extending from the first substrate to the second substrate. The first substrate includes a melted portion of the first resin substrate around the hole, and the second substrate includes a melted portion of the second resin substrate around the hole. The first substrate and the second substrate are bonded to each other with a fused portion between the melted portion of the first resin substrate and the melted of the second resin substrate.

Package to printed circuit board (PCB) transitions are described. In one aspect, a multi-layer PCB includes an external layer having a transition region configured to receive an electrical component and a clear routing region outside of the transition region. The PCB includes first via(s) that extend from the transition region to an inner trace routing layer. The trace routing layer is disposed between the external layer and the second inner trace routing layer. The first inner trace routing layer includes a transition area disposed under the transition region of the external layer, a clear routing area outside of the transition region, and a transmission line that connects a given first via to a second via for a second electrical component. The transmission line includes conductive trace(s) that each have a first width in the transition area and a second width, greater than the first width, in the clear routing area.

A component carrier and a method of manufacturing the same are disclosed. The component carrier includes a stack having a plurality of electrically conductive layer structures and a plurality of electrically insulating layer structures and a coax structure with an electrically conductive substantially horizontally extending central trace and an electrically conductive surrounding structure at least partially surrounding the central trace with electrically insulating material in between. The coax structure is formed by material of the layer structures of the stack.

A wiring structure includes a first dielectric layer, a second dielectric layer adjacent to the first dielectric layer, and a conductive region. The first dielectric layer defines a first opening, and the second dielectric layer defines a second opening. The conductive region includes a conductive via filling the first opening and the second opening. The conductive region further includes a first conductive trace embedded in the second dielectric layer and electrically connected with the conductive via. The conductive region includes a sidewall traversing through a thickness of the second dielectric layer with a substantial linear profile. A method of manufacturing a wiring structure is also disclosed.

A wiring structure includes a first dielectric layer, a second dielectric layer adjacent to the first dielectric layer, and a conductive region. The first dielectric layer defines a first opening, and the second dielectric layer defines a second opening. The conductive region includes a conductive via filling the first opening and the second opening. The conductive region further includes a first conductive trace embedded in the second dielectric layer and electrically connected with the conductive via. The conductive region includes a sidewall traversing through a thickness of the second dielectric layer with a substantial linear profile. A method of manufacturing a wiring structure is also disclosed.

A substrate structure includes a metal substrate, an insulating material, at least one first dielectric layer, and at least one first patterned circuit layer. The metal substrate has a first surface and a second surface opposite to each other and multiple through holes penetrating the metal substrate and connecting the first surface and the second surface. The insulating material fills the through holes and is aligned with the first surface and the second surface. The first dielectric layer is disposed on the first surface and the insulating material, and has multiple first openings. The first openings partially expose the metal substrate. The material of the first dielectric layer includes aluminum nitride or silicon carbide. The first patterned circuit layer is disposed on the first dielectric layer, fills the first openings, and connected to the metal substrate. The first patterned circuit layer partially exposes the first dielectric layer.