A method of manufacturing a laminate, transistor, and method of manufacturing transistor using a composition that includes an organic compound having a hydroxy group; a first cross-linking agent that is at least one organic silicon compound selected from the group including an organic silicon compound including a siloxane bond in the molecule and having three or more cyclic ether groups in the molecule, a chain organic silicon compound including two or more siloxane bonds in the molecule and having two or more cyclic ether groups in the molecule, a cyclic organic silicon compound including D unit in the molecule and having four or more cyclic ether groups bonded to a silicon atom of the D unit in the molecule, and a cyclic organic silicon compound including a T unit in the molecule and having two or more cyclic ether groups in the molecule; and a photocationic polymerization initiator.

The invention relates to a composition comprising a blend of fluorinated electroactive polymers and having a dielectric permittivity that exhibits greater stability over the operating temperature range with respect to each polymer employed on its own. The invention also relates to formulations and films produced on the basis of said composition. The invention also relates to a field-effect transistor, at least part of the dielectric layer of which is composed of a blend of fluorinated electroactive polymers.

A flexible device (1) includes an insulating substrate (2), a source electrode (3), a drain electrode (4), and an extended gate electrode (5) formed on a surface of the insulating substrate (2) at intervals, a channel (6) arranged at an interval between the source electrode (3) and the drain electrode (4), and a gate dielectric (7) formed so as to cover all of the channel (6) and a part of the extended gate electrode (5), in which the insulating substrate (2) is a flexible thin film having light transmissivity, the extended gate electrode (5) is a carbon material thin film having biocompatibility and light transmissivity, the channel (6) is an organic semiconductor thin film, and the gate dielectric (7) is an ionic liquid or an ionic gel.

The present disclosure relates to thin-film lead assemblies and neural interfaces, and methods of microfabricating thin-film lead assemblies and neural interfaces. Particularly, aspects of the present disclosure are directed to a thin-film neural interface that includes a proximal end, a distal end, a supporting structure that extends from the proximal end to the distal end, one or more of conductive traces formed on a portion of the supporting structure, one or more electrodes formed on the front side of the supporting structure in electrical connection with the one or more conductive traces, and a backing formed on the back side of the supporting structure. The supporting structure comprises one or more features to facilitate mechanical adhesion between the supporting structure and the backing.

Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q.sup.1-Q.sup.2 and Q.sup.3-Q.sup.4 are each independently —C(H)═C(H)— or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q.sup.1-Q.sup.2 and Q.sup.3-Q.sup.4 is (II).

A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.

The present invention provides compositions comprising a) at least one polymer consisting of one polymerblock A and at least two polymerblocks B, wherein each polymerblock B is attached to the polymerblock A, and wherein at least 60 mol % of the monomer units of polymerblock B are selected from the group consisting of Formulae (1A), (1B), (1C), (1D), (1E), (1F) and 1G, 1H and 1I wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 are independently and at each occurrence H or C.sub.1-10-alkyl, and b) at least one crosslinking agent carrying at least two azide groups, as well as to layers formed from these compositions, electronic devices comprising these layers and to specific polymers encompassed by the polymers of the composition. ##STR00001##

A high dielectric constant composite material and method for preparing organic thin film transistor using the material as dielectric. The method includes: using sol-gel method, hydrolyzing terminal group-containing silane coupling agent to form functional terminal group-containing silica sol, cross-linked with organic polymer to form composite sol as material of dielectric of organic thin film transistor; forming film by solution method such as spin coating, dip coating, inkjet printing, 3D printing, etc., forming dielectric after curing; preparing semiconductor and electrode respectively to prepare organic thin film transistor device, which, based on composite dielectric material, has mobility of 5 cm2/V.Math.s, exceeding that of using SiO2, having low threshold voltage and no hysteresis effect. Compared with traditional processes like SiO2 thermal oxidation, above method has advantages of simple process, low cost, suitable for large-area preparation, with great market application value.

Described is a flowable preparation for depositing a passivation layer on an organic electronic (OE) device containing an organic layer; the organic layer is selected from an organic semiconductor (OSC) layer and an organic gate insulator (OGI) layer; the preparation comprises a passivating material and a solvent; the solvent includes lactate and/or derivatives thereof. Further described are an OE device and a manufacture method therefor.

A method for enhancing the performance of pentacene organic field-effect transistor (OFET): an n-type semiconductor thin film was set as a buffer layer between pentacene and polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type organic buffer layer is 1˜100 nm. The induced electrons at the interface lead to the reduction of the height of the hole-barrier formed at the interface, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET. The widened distribution region of positive space charges caused by ionized donors in n-type organic buffer layer effectively restricts the back-transfer of holes from polymer to pentacene, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.