The present disclosure describes a method of crosslinking fluoroelastomers, or more precisely thermally-crosslinkable fluorine-containing polymers, and to devices such as OTFTs (organic thin film transistors) incorporating such polymers. In some embodiments, a method comprises mixing: a solvent, a thermally crosslinkable fluorine-containing polymer, and one or more organic bases to form a mixed solution. The mixed solution is deposited over a substrate to form a first layer. The first layer is then crosslinked by thermal treatment to form a crosslinked first layer. The polymer is selected from: homopolymers of vinylidene fluoride; and copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. The one or more organic bases each have a pKa of 10 to 14.

Provided is a resin which is excellent in terms of solubility in common solvents, crosslinking temperature, time required for crosslinking, solvent resistance (cracking resistance), breakdown voltage, leakage current, solvent wettability, and planarity in cases where the resin is formed into a thin film. A resin which comprises repeating units represented by formula (1) and formula (2), and wherein the repeating unit represented by formula (2) is contained in an amount of 20% by mole or more relative to the total amount of the repeating units represented by formula (1) and formula (2).

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Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

Provided are a display substrate and a preparation method thereof, a display panel, and a display device. The display substrate includes a substrate and a plurality of pixel units on the substrate. The pixel unit comprises a plurality of functional layers that are sequentially arranged in a direction away from the substrate. At least one of the plurality of functional layers, which is close to the substrate, constitutes a vertical thin film transistor (VTFT). At least one of the plurality of functional layers, which is away from the substrate, constitutes an organic light-emitting transistor (OLET). An orthographic projection region of the OLET on the substrate and an orthographic projection region of the VTFT on the substrate at least partially overlap.

Disclosed are a thin film transistor includes a gate electrode, an active layer including a semiconductor material and a first elastomer, a gate insulator between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer, wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond and a thin film transistor array and an electronic device including the same.

A technique of forming a stack of layers defining electrical circuitry and comprising a plurality of inorganic conductor levels, wherein the method comprises: forming a conductor for at least one of the conductor levels in stages before and after a step of patterning an underlying organic layer.

A conformal organic field-effect transistor includes an elastic substrate, a gate electrode, a polymer insulating layer, an organic semiconductor layer, and a source electrode and a drain electrode from the bottom up, the source electrode and the drain electrode being embedded in the organic semiconductor layer. A method of forming the conformal organic field-effect transistor includes depositing an organic semiconductor on a substrate surface to form an organic semiconductor layer, the source electrode and the drain electrode are embedded in the organic semiconductor layer; then preparing the polymer insulating layer on a surface of the organic semiconductor layer; transferring the gate electrode from the substrate; forming hydroxyl groups on a metal electrode surface of the gate electrode, a polymer insulating layer surface of the source electrode, and a polymer insulating layer surface of the drain electrode, respectively; and then performing alignment and heating to obtain the conformal organic field-effect transistor.

Provided is an organic thin film transistor having a high carrier mobility. Provided is a polymer compound, including: a repeating unit represented by the following formula (1); and at least two repeating units, the repeating units being at least one selected from the group consisting of a repeating unit having a blocked isocyanato group and a repeating unit having a blocked isothiocyanato group,

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wherein, in formula (1), R.sup.1 is a hydrogen atom or a methyl group; R is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Rf is a fluorine atom or a monovalent organic group including a fluorine atom; R.sup.a is a divalent organic group having 1 to 20 carbon atoms, and a hydrogen atom in the divalent organic group may be substituted with a fluorine atom; X is an oxygen atom or a group represented by NR.sup.7; R.sup.7 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; a is an integer of 0 to 20; and m is an integer of 1 to 5.

A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1.

The present invention relates to organic dielectric layers comprising a polycycloolefinic polymer with a pendent chromophoric group having an absorption maximum in the wavelength range from 230 to 290 nm, and to organic electronic devices comprising them.