In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.

Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrode 204 is disposed over the gate dielectric layer. The gate dielectric layer has a D.sub.it of about 5e.sup.10 cm.sup.2eV.sup.1 to about 5e.sup.11 cm.sup.2eV.sup.1 and a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.

In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.

Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

An organic light-emitting display apparatus including a substrate; a display unit which defines an active area of the substrate and includes a thin film transistor; concave-convex portions protruded from the substrate in an area outside the active area; and an encapsulation layer which encapsulates the display unit. The thin film transistor includes an active layer, a gate insulating layer on the active layer, a gate electrode, a source electrode, a drain electrode, and an interlayer insulating layer between the gate electrode and the source electrode, and between the gate electrode and the drain electrode. The concave-convex portions include portions of the gate insulating layer and the interlayer insulating layer, and the encapsulation layer covers the concave-convex portions.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

A sensor device for detecting a target species in an aqueous media and/or measuring the concentration of a target species in an aqueous media, the sensor device comprising: (a) an active semiconductor comprising an organic semiconductor material that exhibit substantially the same transfer curve for a period of at least 24 hours when first exposed to air; and (b) a structure for directing an aqueous media into contact with the sensor device.

An organic light-emitting display apparatus including a substrate; a display unit which defines an active area of the substrate and includes a thin film transistor; concave-convex portions protruded from the substrate in an area outside the active area; and an encapsulation layer which encapsulates the display unit. The thin film transistor includes an active layer, a gate insulating layer on the active layer, a gate electrode, a source electrode, a drain electrode, and an interlayer insulating layer between the gate electrode and the source electrode, and between the gate electrode and the drain electrode. The concave-convex portions include portions of the gate insulating layer and the interlayer insulating layer, and the encapsulation layer covers the concave-convex portions.

In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.