An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including CNTs embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

The present invention pertains to: a Janus-type triptycene derivative which is capable of forming a self-assembled film which does not depend on the material quality of a substrate; a self-assembled film using said Janus-type triptycene derivative; a structure having said film on a surface thereof; a method for manufacturing said film; and an electronic device using said method.

A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer so as to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.

Objects of the present invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof, to provide a novel compound which is suitable as an organic semiconductor, and to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a manufacturing method thereof, and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.

The organic semiconductor element according to the present invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1.

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An object of the invention is to provide an organic semiconductor element in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed, and a manufacturing method thereof, to provide a novel compound that is suitable as an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.

The organic semiconductor element according to the invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 or 2 below.

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Objects of the present invention are to provide an organic semiconductor element having excellent coating manufacturing process suitability, excellent carrier mobility, excellent heat resistance, and excellent flexibility of a semiconductor active layer and to provide an organic semiconductor composition that can form an organic semiconductor having excellent coating manufacturing process suitability, excellent carrier mobility, excellent heat resistance and excellent flexibility, an organic semiconductor film in which the composition is used, and a method of manufacturing an organic semiconductor element.

The organic semiconductor element according to the present invention includes a compound represented by Formula 1 in a semiconductor active layer. In Formula 1, A is an aromatic ring selected from any one of aromatic rings represented by Formula 2 or 3, *'s represent bonding positions to two side chalcogenophene rings, X.sup.a's represent chalcogen atoms, one of X.sup.1 and Y.sup.1 is a chalcogen atom, and one of X.sup.2 and Y.sup.2 is a chalcogen atom.

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A multilayer graphene composite comprising a plurality of stacked graphene layers separated from one another by an ion gel, wherein the ion gel is intercalated between adjacent graphene layers such that ions within the ion gel are able to arrange themselves at the surfaces of the graphene layers to cause a detectable change in one or more of an electrical and optical property of the graphene layers when a gate voltage is applied to a gate electrode in proximity to the ion gel.

A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

Provided is a semiconductor device having a dual gate field-effect transistor and a sensor in electrical communication with the transistor. The field-effect transistor can have a first gate electrode, a second gate electrode, a source electrode, a drain electrode, a semiconductor layer with parts in contact with the source and drain electrodes, a bi-layer gate insulator, and a second gate insulator. The bi-layer gate insulator can include a first layer and a second layer, the first layer located between the second layer and a first side of the semiconductor layer, the second layer located between the first layer and the first gate electrode. The second gate insulator can be located between the second gate electrode and a second side of the semiconductor layer, and the sensor can be in electrical communication with the second gate electrode.