The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film. An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities.

Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a channel layer at least one of on or in the substrate, an insulation layer on the substrate, a ferroelectric layer on the insulation layer, a fixed charge layer on an interface between the insulation layer and the ferroelectric layer, the fixed charge layer including charges of a first polarity, and a gate on the ferroelectric layer.

Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.

An organic thin-film transistor includes an insulating substrate, a capacitor electrode formed on the insulating substrate, a first insulating layer covering the capacitor electrode, a gate electrode formed on the first insulating layer, a second insulating layer covering the gate electrode and the capacitor electrode, a source electrode formed on the second insulating layer, a drain electrode formed on the second insulating layer, and a semiconductor layer formed on the second insulating layer in a portion between the source electrode and the drain electrode and including an organic semiconductor material.

The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 are independently and at each occurrence H or C.sub.1-C.sub.10-alkyl. ##STR00001##

A charge trapping non-volatile organic memory device according to the present invention has a structure in which an organic matter-based blocking layer, a trapping layer, and a tunneling layer are sequentially positioned between a gate and an organic semiconductor layer positioned on an insulating substrate, the trapping layer including a metal oxide and a polymer, and has an organic-inorganic composite film in which the metal oxide is dispersed in a polymer matrix in units of atoms.

A method for enhancing the performance of pentacene organic field-effect transistor (OFET) using n-type semiconductor interlayer: an n-type semiconductor thin film was set between the insulating layer and the polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type semiconductor layer is 1˜200 nm. The induced electrons at the interface of n-type semiconductor and polymer electret lead to the reduction of the height of the hole-barrier formed at the interface of polymer and pentacene, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET, adjusting the height of hole barrier at the interface of polymer and pentacene to a reasonable scope by controlling the quantity of induced electrons in n-type semiconductor layer, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.

A field effect transistor includes a semiconductor substrate, a first pad layer, carbon nanotubes and a gate structure. The first pad layer is disposed over the semiconductor substrate and comprises a 2D material. The carbon nanotubes are disposed over the first insulating pad layer. The gate structure is disposed over the semiconductor substrate and is vertically stacked with the carbon nanotubes. The carbon nanotubes extend from one side to an opposite side of the gate structure.

Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a channel layer at least one of on or in the substrate, an insulation layer on the substrate, a ferroelectric layer on the insulation layer, a fixed charge layer on an interface between the insulation layer and the ferroelectric layer, the fixed charge layer including charges of a first polarity, and a gate on the ferroelectric layer.

Provided are an organic thin film transistor that has high bendability and can suppress a decrease in carrier mobility caused by a pinhole of an insulating film or leveling properties and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gate electrode; an insulating film that is formed to cover the gate electrode; an organic semiconductor layer that is formed on the insulating film, and a source electrode and a drain electrode that are formed on the organic semiconductor layer, in which the insulating film includes an inorganic film consisting of SiNH.