The present invention relates to a semiconductor composition comprising an inorganic semiconducting material and an organic binder. The present invention further relates to an electronic device comprising a semiconducting layer consisting of such semiconductor composition.

The present disclosure describes additives that attenuate a specific transport channel in ambipolar semiconductors to achieve unipolar characteristics. Carrier selective traps are included in the ambipolar semiconductors and are chosen on the basis of energetic preferences for holes or electrons and the relative positions of the molecular orbital energies of host polymer and the dopants. In one embodiment, a composition of matter useful as a current transport region in an organic semiconductor device comprises a semiconducting polymer; and means for accepting holes (e.g., a hole trapping compound) injected into the current transport region so as to impede conduction of the holes in the semiconducting polymer. This simple solution-processable method can improve the on and off current ratios (I.sub.ON/I.sub.OFF) of OFETs by up to three orders of magnitude. Moreover, the treatment yields tailored blends that can be used to fabricate complementary inverters with excellent gain and low-power characteristics.

The present disclosure pertains to the field of carbon nanotube technologies, and provides a carbon nanotube semiconductor device and a manufacturing method thereof. The manufacturing method of a carbon nanotube semiconductor device provided in the present disclosure comprises: forming a carbon nanotube layer with a carbon nanotube solution; and treating the carbon nanotube layer with an acidic solution. The carbon nanotube semiconductor device manufactured by the method of the present disclosure has good performance uniformity.

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

An object is to provide an organic semiconductor element having excellent carrier mobility and heat resistance of a semiconductor active layer, an organic semiconductor composition for obtaining this element, an organic semiconductor film, and a method of manufacturing an organic semiconductor element in which the composition is used, and another object is to provide a compound and an oligomer or a polymer that are suitably used in the organic semiconductor element, the organic semiconductor composition, the organic semiconductor film, and the method of manufacturing an organic semiconductor element.

The organic semiconductor element of the present invention includes a compound represented by Formula 1 below in a semiconductor active layer. In Formula 1, X represents a chalcogen atom, p and q each independently represent an integer of 0 to 2, and R.sup.1 and R.sup.2 each independently represent a halogen atom or a group represented by Formula W below.

##STR00001##

A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and metallic nanoparticles grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of charges in the channel region. The metallic nanoparticles have a substantially uniform pattern arrangement in the channel region.

An active matrix light emitting diodes display module integrated with single-walled carbon nanotubes control circuits includes a light emitting diode pixel having a crystalline semiconductor light emitting diode, single-walled carbon nanotubes switching transistors and a charge storage capacitor.

One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

A thin film semiconductor comprising a compound of formula I or II wherein: R.sup.1 and R.sup.2, at each occurrence, independently are selected from a C.sub.1-30 alkyl group, a C.sub.2-30 alkenyl group, a C.sub.2-30 alkynyl group and a C.sub.1-30 haloalkyl group, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 independently are H or an electron-withdrawing group, wherein at least one of R.sup.3, R.sup.4, R.sup.5, and R.sup.6 is an electron-withdrawing group; and a non-conductive polymer.

##STR00001##

A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.