The present disclosure provides for the development and applications of monomeric, oligomeric and/or polymeric semiconductor materials comprising a five-membered heteroaromatic unit (e.g., thiophene; furan; selenophene; etc.) that includes an acrylyl or an acrylyl-like (—C═C—CO—) side chain. The semiconductor materials can be used as organic semiconductors for use in electronic, optical, or optoelectronic devices such as organic thin film transistors and organic photovoltaics. The disclosed semiconductor materials (e.g., semiconducting polymer compounds) can be used as high performance semiconductors (e.g., for organic solar cells or organic photovoltaics (OPVs)), and the disclosed semiconductor materials can be used for other devices (e.g., organic thin film transistors (OTFTs) and sensors, etc.).

A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device. ##STR00001## Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.

A method, includes: reacting at least one donor group with at least one protected acceptor group to form a plurality of protecting group-containing OSC polymers; removing the protecting group from the plurality of protecting group-containing OSC polymers to form H-bonding sites; and fusing the H-bonding sites of a first OSC polymer backbone with H-bonding sites of a second OSC polymer backbone to form π-π interactions between conjugated OSC polymers.

A gas sensor system (100) for detecting conjugated hydrocarbons and/or esters in an environment. The gas sensor system includes two organic thin film transistor (OTFT) gas sensors (200, 300). The first OTFT gas sensor (200) allows for interaction of the conjugated hydrocarbon with the gas sensor's source and drain electrodes, and the second OTFT gas sensor (300) blocks the conjugated hydrocarbon from interacting with the gas sensor's source and drain electrodes. In the second gas sensor, a monolayer comprising 4-aminobenzenethiol and 4-fluorobenzenethiol may cover the source and drain electrodes preventing the conjugated hydrocarbon from interacting with the source and drain electrodes. The gas sensor system may be used to monitor a volatile conjugated hydrocarbon and/or an ester produced by fruit.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

A polymer blend includes at least one organic semiconductor (OSC) polymer, at least one crosslinker, and at least one photoinitiator, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, the fused thiophene being beta-substituted, and such that the crosslinker includes at least one of: acrylates, epoxides, oxetanes, alkenes, alkynes, azides, thiols, allyloxysilanes, phenols, anhydrides, amines, cyanate esters, isocyanate esters, silyl hydrides, cinnamates, coumarins, fluorosulfates, silyl ethers, or a combination thereof.

Disclosed is a preparation method for crosslinked nanoparticle film. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.