Apparatus and associated methods relate to a thermoelectric device having a superconducting generator ring. In an illustrative example, a thermoelectric device may include a differential generator supply and a thermoelectric generator ring. The thermoelectric generator ring, for example, may be configured to generate an electric current based on a differential temperature received from the differential temperature supply. For example, the thermoelectric generator ring may include a number of thermoelectric coupons forming a ring on a horizontal plane. Each of the thermoelectric coupons may include an n-type impurity diffused silicon semiconductor (IDSS) and an p-type IDSS. For example, the impurities may be distributed in the IDSS at a predetermined concentration distribution, at which a forward bias voltage of the IDSS is below a predetermined target voltage (e.g., 20 mV) Various embodiments may advantageously generate a low-voltage loss high electric current based on an applied temperature differential at the thermoelectric coupons.

A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.

Apparatus and associated methods relate to a thermoelectric device having a superconducting generator ring. In an illustrative example, a thermoelectric device may include a differential generator supply and a thermoelectric generator ring. The thermoelectric generator ring, for example, may be configured to generate an electric current based on a differential temperature received from the differential temperature supply. For example, the thermoelectric generator ring may include a number of thermoelectric coupons forming a ring on a horizontal plane. Each of the thermoelectric coupons may include an n-type impurity diffused silicon semiconductor (IDSS) and an p-type IDSS. For example, the impurities may be distributed in the IDSS at a predetermined concentration distribution, at which a forward bias voltage of the IDSS is below a predetermined target voltage (e.g., 20 mV) Various embodiments may advantageously generate a low-voltage loss high electric current based on an applied temperature differential at the thermoelectric coupons.

A solid-state cooler device is disclosed that includes a first portion having a normal metal heat sink layer and a plurality of first parallel ridges disposed over the normal metal heat sink layer, and a second portion having a normal metal layer, insulator layer, superconductor layer (NIS) junction and a plurality of second parallel ridges disposed over the superconductor layer of the NIS junction. The plurality of first parallel ridges are in contact and orthogonal to the plurality of second parallel ridges to provide a plurality of grid point contacts.

A superconducting bipolar thermoelectric memory includes a memory cell, a connection in parallel between a bipolar thermoelectric element and a predetermined resistive load, and a writing element. A current generator is arranged to send an injected current to the thermoelectric element and the resistive load. The thermoelectric element is arranged to be heated by a predetermined thermal gradient and to generate corresponding output voltages on the resistive load depending on the sign of the injected current at the writing stage. The output voltages correspond to respective stable logic states stored by the memory resetting the bias current to zero.

A solid-state cooler device is disclosed that includes a first portion having a normal metal heat sink layer and a plurality of first parallel ridges disposed over the normal metal heat sink layer, and a second portion having a normal metal layer, insulator layer, superconductor layer (NIS) junction and a plurality of second parallel ridges disposed over the superconductor layer of the NIS junction. The plurality of first parallel ridges are in contact and orthogonal to the plurality of second parallel ridges to provide a plurality of grid point contacts.

Apparatus and associated methods relate to a thermoelectric device having a superconducting generator ring. In an illustrative example, a thermoelectric device may include a differential generator supply and a thermoelectric generator ring. The thermoelectric generator ring, for example, may be configured to generate an electric current based on a differential temperature received from the differential temperature supply. For example, the thermoelectric generator ring may include a number of thermoelectric coupons forming a ring on a horizontal plane. Each of the thermoelectric coupons may include an n-type impurity diffused silicon semiconductor (IDSS) and an p-type IDSS. For example, the impurities may be distributed in the IDSS at a predetermined concentration distribution, at which a forward bias voltage of the IDSS is below a predetermined target voltage (e.g., 20 mV) Various embodiments may advantageously generate a low-voltage loss high electric current based on an applied temperature differential at the thermoelectric coupons.