Disclosed is a method of manufacturing an epitaxy oxide thin film of enhanced crystalline quality, and an epitaxy oxide thin film manufactured thereby according to the present invention. With respect to the manufacturing method of the epitaxy oxide thin film, which epitaxially grows an orientation film with an oxide capable of being oriented to (001), (110), and (111) on a single crystal Si substrate, because time required for raising a temperature of the orientation film up to an annealing temperature at room temperature is extremely minimized, thermal stress arising from the large difference in thermal expansion coefficients between the substrate and the orientation film is controlled, so crystalline quality of the epitaxy oxide thin film can be enhanced. Moreover, various epitaxial functional oxides are integrated into the thin film of enhanced crystalline quality so that a novel electronic device can be embodied.

In a MEMS device in which a first electrode layer, a piezoelectric layer, and a second electrode layer are stacked in this order from a first surface side of a substrate, a first wiring layer is stacked on a second surface on a side opposite to a first surface of the substrate and the first electrode layer and the first wiring layer are connected to each other via a through wiring passing through the substrate.

A piezoelectric device includes a support member, and a vibrating portion provided on a support surface of the support member. The vibrating portion includes, in addition to a first electrode, a piezoelectric film and a second electrode arranged in a stacking direction, an insulating film configured to increase an electric resistance value between the first and second electrodes. The first electrode is provided on the support surface of the support member, and includes an opening penetrating the first electrode in the stacking direction. The piezoelectric film is provided on the first electrode to extend across the opening. The second electrode is provided on the piezoelectric film. The insulating film is provided at a position between the first electrode and the second electrode, and at least a part of the insulating film overlaps with the opening in the stacking direction.

A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.

A piezoelectric element includes, on a base, an underlying layer for controlling crystallinity of a piezoelectric layer, and the piezoelectric layer. The piezoelectric layer includes a crystal with an ABO.sub.3-type structure having at least Pb at A sites. In the underlying layer, an interface-with-the-base side is configured including at least Pb and another substance with a different composition rate from that of the piezoelectric layer at the A sites, and a substance with a different composition ratio from that of the piezoelectric layer at B sites. In a layer above the interface-with-the-base side in the underlying layer, the composition rate of the other substance included at the A sites of the underlying layer progressively changes and also the composition ratio of the substance included at the B sites progressively changes, from the interface-with-the-base side toward the interface-with-the-piezoelectric-layer side to approach the composition of the piezoelectric layer.

The present disclosure provides a deformation driving device for flexible display panel, the deformation driving device includes a photodeformable element, and the flexible display panel includes a display surface and a back surface opposite to the display surface. The photodeformable element has a binding surface for being attached to the flexible display panel's back surface, and is capable of deforming under irradiation of light with a predetermined wavelength to bend or flatten.

A functional ink that includes a precursor sol-gel solution and a solvent is provided. The precursor sol-gel solution is used for forming an oxide dielectric film having a perovskite structure represented by a general formula ABO.sub.3, and has been subjected to a partial hydrolysis process in which a viscosity change resulting from the partial hydrolysis process is controlled to be less than or equal to 50%, and water contained in the precursor sol-gel solution is controlled to be greater than or equal to 0.50 times and less than or equal to 10 times by molar ratio with respect to a B site atom contained in the precursor sol-gel solution. The functional ink has a metal oxide concentration and a viscosity that renders the functional ink suitable for being discharged from a nozzle of a liquid droplet discharge apparatus included in a thin film fabrication apparatus.

A piezoelectric element includes a laminate including first and second piezoelectric layers with respective polarization directions in a thickness direction and an elastic layer provided between the first piezoelectric layer and the second piezoelectric layer, first and second terminal electrodes that are provided on an external surface of the laminate, a first detection electrode provided on a positive polar surface of the first piezoelectric layer, a second detection electrode provided on a negative polar surface of the first piezoelectric layer, a third detection electrode provided on a positive polar surface of the second piezoelectric layer, and a fourth detection electrode provided on a negative polar surface of the second piezoelectric layer. The first detection electrode and the fourth detection electrode are connected to the first terminal electrode. The second detection electrode and the third detection electrode are connected to the second terminal electrode.

Disclosed is a method of manufacturing a piezoelectric substrate, the method including: forming an intermediate layer of Ti and a lower electrode of Pt oriented in a (111) axis direction on a substrate without heating the substrate; applying a coating liquid for forming an orientation control layer made of lead titanate onto the lower electrode; drying the coating liquid at a predetermined temperature to form an orientation control layer precursor made of lead titanate; applying a coating liquid for forming a piezoelectric thin film made of lead zirconate titanate; drying the coating liquid at a predetermined temperature to form a piezoelectric precursor made of a lead zirconate titanate precursor; and collectively firing the orientation control layer precursor and the piezoelectric precursor to crystallize both the precursors, to thereby form a piezoelectric thin film made of lead zirconate titanate preferentially oriented in a (110) plane.

The ultrasound probe includes a piezoelectric element including a piezoelectric composition and an electrode that applies a voltage to the piezoelectric composition. The piezoelectric composition has piezoelectric characteristics expressed by any coordinates included in a region formed by a polyhedron having a plurality of predetermined points as vertexes in Cartesian coordinates (k.sub.eff, ε.sub.33.sup.S, E.sub.c) including variables k.sub.eff, ε.sub.33.sup.S and E.sub.c.