The present invention relates to a high temperature-superconducting wire having a superconducting layer laminated thereon and a method of manufacturing the same. The method includes: preparing a pair of superconducting wires each of which includes a metal substrate, a buffer layer, a superconducting layer, and a protective layer; laminating the pair of superconducting wires to allow respective protective layers to face each other; performing thermal treatment to the laminated superconducting wires to join the protective layers together; separating the metal substrate and the buffer layer from the superconducting layer on one side; and forming a protective layer on an upper part of the superconducting layer having a surface exposed. The present invention provides a high temperature-superconducting wire which includes a plurality of biaxially textured superconducting layers laminated thereby improving electro-conductivity, wherein the plurality of superconducting layers are separated from each other thereby reducing a loss of alternating current.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

Materials and methods are disclosed for fabricating superconducting integrated circuits for quantum computing at millikelvin temperatures, comprising both quantum circuits and classical control circuits, which may be located on the same integrated circuit or on different chips of a multi-chip module. The materials may include components that reduce defect densities and increase quantum coherence times. Multilayer fabrication techniques provide low-power and a path to large scale computing systems. An integrated circuit system for quantum computing is provided, comprising: a substrate; a kinetic inductance layer having a kinetic inductance of at least 5 pH/square; a plurality of stacked planarized superconducting layers and intervening insulating layers, formed into a plurality of Josephson junctions having a critical current of less than 100 μA/μm.sup.2; and a resistive layer that remains non-superconducting at a temperature below 1 K, configured to damp the plurality of Josephson junctions.

A composition for a plurality of configurations of a high-temperature superconductor tape including a superconducting film disposed on a compliant film or sandwiched or captured between at least one pair of compliant film layers.

An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 μm.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

A superconducting coil according to the present disclosure includes: a substrate having a first surface and a second surface; a superconducting layer having a third surface and a fourth surface; respective stabilization layers; and respective protective layers. The second surface is opposite to the first surface. The fourth surface is opposite to the third surface. The superconducting layer is disposed on the substrate such that the third surface faces the second surface. The respective stabilization layers are disposed on the first surface and the fourth surface. The respective protective layers are disposed on the stabilization layers. Adhesion strength between each of the stabilization layers and each of the protective layers is lower than strength of the superconducting layer.

Proposed are a thin film having single crystallinity and an excellent crystal orientation property, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity. The technical gist of the present disclosure includes a thin film having single crystallinity, which is formed by depositing a polycrystalline second material on an upper portion of a substrate including a polycrystalline first material and which has a crystal orientation property satisfying the following Relational Expression 1 at a grain boundary, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity.

0°<FWHM.sub.2≤3°  [Relational Expression 1] (FWHM.sub.2 is a full width at half maximum of a distribution curve of a misorientation angle at the grain boundary of the thin film).