An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

An object receiving container may receive an object which is examinable, analyzable and/or processable at cryo-temperatures. An object holding system may comprise an object receiving container. A beam apparatus or an apparatus for processing an object may comprise an object receiving container or an object holding system. An object may be examined, analyzed and/or processed using an object receiving container or an object holding system. The object receiving container may comprise a first container unit, a cavity for receiving the object, a second container unit, which is able to be brought into a first position and/or into a second position relative to the first container unit, and at least one fastening device which is arranged at the first container unit or at the second container unit for arranging the object receiving container at a holding device.

An electromagnetic lens includes a coil, and a pole piece configured to include an upper wall, a lower wall, an outer peripheral wall and an inner peripheral wall which are formed using a conductive magnetic material, to surround the coil by the upper wall, the lower wall, the outer peripheral wall and the inner peripheral wall, one of opposite facing surfaces of an upper part and a lower part of the inner peripheral wall and opposite facing surfaces of the upper wall and the inner peripheral wall being insulated electrically, the outer peripheral wall including a laminated structure where a magnetic material and an insulator are alternately laminated in a direction of a central axis of a trajectory of a passing electron beam, and to be covered at least the laminated structure of the outer peripheral wall with an insulator.

A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each electrode is also provided with a respective first protrusion extending radially inwards from a radial inner side of the respective electrode body thereof, and each magnetic pole is also provided with a second protrusion extending radially inwards from a radial inner side of the respective magnetic pole body thereof.

Provided is a charged particle beam system capable of scanning a sample in a short time. The charged particle beam system is operative to scan the sample with a charged particle beam and to obtain a scanned image, and includes a magnetic deflector for producing a magnetic field to deflect the beam, an electrostatic deflector for producing an electric field to deflect the beam, and a controller for controlling both magnetic deflector and electrostatic deflector. The controller causes the magnetic deflector to deflect the beam in a first direction and to draw a first scan line, causes the magnetic deflector to deflect the beam in a second direction perpendicular to the first direction, causes the electrostatic deflector to deflect the beam in a third direction opposite to the first direction, and causes the magnetic deflector to deflect the beam in the first direction and to draw a second scan line.

An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

A scanning electron microscope having an electron column positioned to direct an electron beam onto a sample the electron column having a vacuum enclosure; an electron source; and an electromagnetic objective lens positioned within the vacuum enclosure, the electromagnetic objective lens including a housing having an entry aperture at top surface thereof and an exit aperture at bottom thereof; an electromagnetic coil radially positioned within the housing; a light objective positioned within the housing and comprising a concave minor having a first axial aperture and a convex minor having a second axial aperture; an electron beam deflector positioned within the housing and comprising a first set of deflectors and a second set of deflectors positioned below the first set of deflectors, wherein the second set of deflectors is positioned below the first axial aperture and the first set of deflectors is positioned

The present invention provides a digital high-resolution detector for detecting X-ray, UV light or charged particles. In various embodiments, the digital detector comprises an array of CMOS or CCD pixels and a layer of conversion material on top of the array designed for converting incident X-ray, UV light or charged particles into photons for CMOS or CCD sensors to capture. The thin and high-resolution detector of the invention is particularly useful for monitoring and aligning beams in, and optimizing system performance of, an apparatus of charged-particle beam e.g. an electron microscope.

The present invention provides a driving system comprising two actuators for moving a stage through two elastic connectors; and a general apparatus/device comprising such a driving system, such as a machine tool, an analytical instrument, an optical microscope, and an apparatus of charged-particle beam such as electron microscope and an electron beam lithographical apparatus. When used in an electron microscope, the stage can be used as a specimen stage or a plate having apertures for electron beam to pass through. The novel stage driving system exhibits numerous technical merits such as simpler structure, better manufacturability, improved cost-effectiveness, and higher reliability, among others.

A particle beam system includes a multi-beam particle source for generating a multiplicity of charged individual particle beams, and a magnetic multi-deflector array for deflecting the individual particle beams in the azimuthal direction. The magnetic multi-deflector array includes a magnetically conductive multi-aperture plate having a multiplicity of openings, which is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the openings of the multi-aperture plate. The magnetic multi-deflector array also includes a magnetically conductive aperture plate having an individual opening. The aperture plate is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the first aperture plate. The multi-aperture plate and the first aperture plate are connected to each other such that a cavity is formed between the two plates. A first coil for generating a magnetic field is arranged in the cavity between the first aperture plate and the multi-aperture plate such that the multiplicity of individual particle beams substantially pass through the coil.