A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each electrode is also provided with a respective first protrusion extending radially inwards from a radial inner side of the respective electrode body thereof, and each magnetic pole is also provided with a second protrusion extending radially inwards from a radial inner side of the respective magnetic pole body thereof.

A fine-adjustable charged particle lens comprises a magnetic circuit assembly including permanent magnets, a yoke body, and a shunting device comprising a shunting component, and this assembly surrounds a beam passage extending along the longitudinal axis (cx). The shunting device is placed in the yoke body besides the permanent magnets and may be composed of several sector components, comprising different high magnetically permeable materials. The permanent magnet and the yoke body form a magnetic circuit having at least two gaps, in order to generate a magnetic field reaching inwards into the beam passage, into which a sleeve insert having electrostatic electrodes can be inserted, which may also generate an electric field spatially overlapping said magnetic field. The shunting device partially bypasses the magnetic flux of said circuit assembly and thus reduces the magnetic field to a desired value.

Provided is a charged particle beam system capable of scanning a sample in a short time. The charged particle beam system is operative to scan the sample with a charged particle beam and to obtain a scanned image, and includes a magnetic deflector for producing a magnetic field to deflect the beam, an electrostatic deflector for producing an electric field to deflect the beam, and a controller for controlling both magnetic deflector and electrostatic deflector. The controller causes the magnetic deflector to deflect the beam in a first direction and to draw a first scan line, causes the magnetic deflector to deflect the beam in a second direction perpendicular to the first direction, causes the electrostatic deflector to deflect the beam in a third direction opposite to the first direction, and causes the magnetic deflector to deflect the beam in the first direction and to draw a second scan line.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

Systems for reducing the generation of thermal magnetic field noise in optical elements of microscope systems, are disclosed. Example microscopy optical elements having reduced Johnson noise generation according to the present disclosure comprises an inner core composed of an electrically isolating material, and an outer coating composed of an electrically conductive material. The product of the thickness of the outer coating and the electrical conductivity is less than 0.01Ω.sup.−1. The outer coating causes a reduction in Johnson noise generated by the optical element of greater than 2×, 3×, or an order of magnitude or greater. In a specific example embodiment, the optical element is a corrector system having reduced Johnson noise generation. Such a corrector system comprises an outer magnetic multipole, and an inner electrostatic multipole. The inner electrostatic multipole comprises an inner core composed of an electrically isolating material and an outer coating composed of an electrically conductive material.

Systems for reducing the generation of thermal magnetic field noise in optical elements of microscope systems, are disclosed. Example microscopy optical elements having reduced Johnson noise generation according to the present disclosure comprises an inner core composed of an electrically isolating material, and an outer coating composed of an electrically conductive material. The product of the thickness of the outer coating and the electrical conductivity is less than 0.01Ω.sup.−1. The outer coating causes a reduction in Johnson noise generated by the optical element of greater than 2×, 3×, or an order of magnitude or greater. In a specific example embodiment, the optical element is a corrector system having reduced Johnson noise generation. Such a corrector system comprises an outer magnetic multipole, and an inner electrostatic multipole. The inner electrostatic multipole comprises an inner core composed of an electrically isolating material and an outer coating composed of an electrically conductive material.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.