In a plasma processing apparatus of an exemplary embodiment, a radio frequency power source generates radio frequency power for plasma generation. A bias power source periodically applies a pulsed negative direct-current voltage to a lower electrode to draw ions into a substrate support. The radio frequency power source supplies the radio frequency power as one or more pulses in a period in which the pulsed negative direct-current voltage is not applied to the lower electrode. The radio frequency power source stops supply of the radio frequency power in a period in which the pulsed negative direct-current voltage is applied to the lower electrode. Each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears.

Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate in an etch process chamber includes: pulsing RF power from an RF bias power supply to a lower electrode disposed in a substrate support of the etch process chamber at a first frequency of about 200 kHz to about 700 kHz over a first period to create a plasma in a process volume of the etch process chamber, wherein a conductance liner surrounds the process volume to provide a ground path for an upper electrode of the etch process chamber; and pulsing RF power from the RF bias power supply to the lower electrode at a second frequency of about 2 MHz to about 13.56 MHz over the first period.

Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein; a support unit for supporting a substrate within the process chamber; a gas supply unit for supplying a process gas inside the process chamber; and a plasma generation unit for generating a plasma from the process gas, wherein the plasma generation unit comprises: a top electrode disposed above the substrate; a bottom electrode disposed below the substrate; an edge electrode disposed at an edge surrounding the substrate; three high frequency power sources applying a high frequency power to the bottom electrode; and an edge impedance control circuit connecting to the edge electrode.

A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

An impedance matching device 2A connected between one or more plasma generating electrodes 51, 52 and a RF power supply 1 that selectively supplies RF power of multiple frequencies includes multiple matching devices 31, 32 each of which corresponds to each frequency of the multiple frequencies of the RF power, and matches an impedance of the RF power supply 1 to an impedance of a plasma load, and a demultiplexer 20 that demultiplexes the RF power of multiple frequencies output by the RF power supply 1 and feeds each of the demultiplexed RF power to a corresponding matching device in the multiple matching devices 31, 32.

Examples of a plasma treatment device include an RF generator, a matching box including an input terminal connected with the RF generator, a sensor configured to sense high-frequency electricity, an impedance adjustment circuit, and an output terminal, a matching controller connected with the sensor and configured to control the impedance adjustment circuit, a reactor chamber connected with the output terminal, and a harmonic filter circuit connected with a transmission line between the sensor and the reactor chamber.

An apparatus and method for performing closed-loop multiple-output control of radio frequency (RF) matching for a semiconductor wafer fabrication process is provided. An apparatus for providing signals to a station of a process chamber performs semiconductor fabrication processes. A plurality of signal generators generates signals having first and second frequencies. A measurement circuit measures a voltage standing wave ratio (VSWR). A match reflection optimizer has a reactive component configured to be adjusted responsive to an output signal from the measurement circuit.

Early warning systems and methods for determining capacitor failures are described. One of the methods includes controlling a motor to further control a variable capacitor that is coupled to the motor to facilitate achieving a hard stop position or a home position of the variable capacitor for multiple times. Each time the motor is controlled to facilitate achieving the home position or the hard stop position, a number of steps that are taken by the motor are recorded. The numbers of steps are compared with each other to determine whether the variable capacitor has failed.