A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

Methods and systems for multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. A radio frequency (RF) signal is pulsed within a processing chamber in accordance with a set of RF pulsing parameters. Sensor data is received from one or more sensors that indicates a multi-level RF pulse waveform detected within the processing chamber based on the RF signal pulsing. One or more peaks are identified in the detected multi-level RF pulse waveform. Each identified peak corresponds to at least one RF signal pulse of the RF signal pulsing within the processing chamber. A determination is made, based on the identified one or more peaks, whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform. An indication of whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform is provided to a client device.

A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

A radio-frequency (RF) power supply apparatus includes a first power supply, a second power supply, and a matching device connected to the first/second power supplies. The first power supply supplies first RF power to a load by outputting first RF voltage with a first fundamental frequency. The second power supply supplies second RF power to the load by outputting second RF voltage with a second fundamental frequency lower than the first fundamental frequency. The matching device generates a clock signal with a frequency higher than the first fundamental frequency and provides the clock signal to the first power supply. The first power supply generates, by using the clock signal, a waveform signal with the same cycle as the second RF voltage. The first power supply performs, by using the clock signal, frequency modulation control on the first RF voltage to be output from the first power supply.

Plasma processing systems and methods are disclosed. The plasma processing system includes a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator.

Methods and apparatuses for depositing thin films using plasma-enhanced atomic layer deposition (PEALD) with ramping radio-frequency (RF) power are provided herein. Embodiments involve increasing the RF power setting of PEALD cycles after formation of initial screening layers at low RF power settings.

Method for tuning a voltage setpoint for a multi-state pulsed RF signal in a plasma processing system, including: applying RF power from a first generator to an ESC, the RF power from the first generator defining a first multi-state pulsed RF signal; applying RF power from a second generator to an edge electrode that surrounds the ESC and is disposed below an edge ring that surrounds the ESC, the RF power from the second generator defining a second multi-state pulsed RF signal having a first state and a second state, wherein for each state of the second multi-state pulsed RF signal, the second generator automatically introduces a phase adjustment to substantially match phase with a corresponding state of the first multi-state pulsed RF signal; adjusting a voltage setpoint for the second state of the second multi-state pulsed RF signal to tune the phase adjustment to a target phase adjustment setting.

Embodiments provided herein generally include apparatus, plasma processing systems and methods for distortion current mitigation. An example plasma processing system includes a voltage source coupled to an input node, which is coupled to an electrode disposed within a processing chamber, wherein the voltage source is configured to generate a pulsed voltage signal at the input node; a signal generator having an output, wherein the RF signal generator is configured to deliver a first RF signal at a first RF frequency to the input node; a bandpass filter coupled between the output of the signal generator and the input node, wherein the bandpass filter is configured to attenuate second RF signals that are outside a range of frequencies including the first RF frequency of the first RF signal; and an impedance matching circuit coupled between the bandpass filter and the input node.

A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.