Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a chamber having an inner space; a support unit that supports a substrate in the inner space; a ring unit disposed on an edge area of the support unit when viewed from above; a power unit that generates RF power for forming an electric field in the inner space; and a harmonic control unit connected to the ring unit to control harmonics generated by the RF power.

A high-frequency power supply device includes: a first power supply that supplies first high-frequency power to a load by outputting a first high-frequency voltage having a first fundamental frequency; a second power supply that supplies second high-frequency power to the load by outputting a second high-frequency voltage having a second fundamental frequency lower than the first fundamental frequency; a first matching unit between the first power supply and the load; and a second matching unit between the second power supply and the load. When frequency-modulating the first high-frequency voltage with a modulation signal having a same frequency as the second fundamental frequency to output a modulated wave, the first power supply repeatedly performs search processing of a start phase of the modulation signal and search processing of a frequency shift amount of the modulated wave such that magnitude of a reflection coefficient or magnitude of reflected wave power reduces.

A high-frequency power supply apparatus includes the following elements. A first power supply outputs a first high-frequency voltage with a first fundamental frequency. A second power supply outputs a second high-frequency voltage with a second fundamental frequency lower than the first fundamental frequency. A second matching device is connected between the second power supply and the load. The second matching device generates a timing control signal with a frequency lower than the second fundamental frequency. The first power supply generates a modulation signal by applying a start phase and a frequency shift amount to a modulation fundamental wave signal whose frequency is equal to the second fundamental frequency. The start phase is applied to the modulation fundamental wave signal in accordance with an input timing of the timing control signal. The first power supply performs frequency modulation on the first high-frequency voltage by using the modulation signal.

A high-frequency power supply apparatus includes the following elements. A first power supply supplies first power to a load by outputting a first voltage whose fundamental frequency is higher than a second voltage output by a second power supply. A period signal generation circuit generates a period signal matching a frequency and a phase of the second voltage. A waveform control circuit generates a modulation signal for performing frequency modulation on a fundamental wave signal of the first voltage, and adjusts an output timing of the modulation signal in accordance with a timing of the period signal. The first power supply generates a first frequency signal by performing frequency modulation on the fundamental wave signal of the first voltage by using the modulation signal. The first power supply performs power amplification on the first frequency signal and outputs, to the load, the first frequency signal as first power.

To simplify a process of suppressing an increase in a reflected wave power caused by IMD, provided is a high-frequency power supply system for providing a high-frequency power to a load, including: a first power supply for supplying a first high-frequency power to the load; a second power supply for supplying a second high-frequency power to the load; and a matching device. The matching device provides a system clock to each of the first power supply and the second power supply. The second power supply outputs a second high-frequency voltage at a control period determined based on the system clock provided from the matching device. The first power supply outputs a first high-frequency voltage obtained by frequency modulation of a fundamental wave signal having a first fundamental frequency and through amplification, in each control period determined based on the system clock provided from the matching device.

A high-frequency power supply device includes: a first power supply that supplies first high-frequency power to a load by outputting a first high-frequency voltage having a first fundamental frequency; a second power supply that supplies second high-frequency power to the load by outputting a second high-frequency voltage having a second fundamental frequency lower than the first fundamental frequency; a first matching unit that performs a first matching operation of matching an impedance of the first power supply with an impedance of the load in a state in which intermodulation distortion caused by the first high-frequency power and the second high-frequency power being simultaneously supplied to the load, occurs. The first power supply frequency-modulates the first high-frequency voltage with a modulation signal having a same frequency as the second fundamental frequency to output a modulated wave after the first matching operation is completed.

Provided is a plasma control apparatus including a plasma electrode disposed in a plasma chamber and to which radio frequency (RF) power having a fundamental frequency configured to generate plasma is applied, an edge electrode disposed adjacent to the plasma electrode and corresponding to a plasma edge region, and a plasma control circuit electrically connected to the edge electrode, the plasma control circuit being configured to control an electrical boundary condition in a plasma edge boundary region of a first frequency component, a harmonic wave component generated by nonlinearity of the plasma and intermodulation distortion frequency components generated by a frequency component in the plasma chamber and each of the first frequency component and the harmonic wave component, wherein the plasma control circuit is configured to change the electrical boundary condition to control a standing wave in the plasma chamber.

An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power supply in an cryogenic temperature environment where a substrate temperature is controlled to be less than or equal to −35° C.; generating a plasma by adding a hydrocarbon gas containing at least 3 carbon atoms to an etching gas containing carbon, hydrogen, and fluorine; and etching a silicon oxide film or a laminated film made up of laminated layers of silicon-containing films having different compositions using the generated plasma.

A plasma processing apparatus including: a processing chamber in which a sample is plasma-processed; a radio frequency power supply configured to supply a radio frequency power for generating plasma; a first radio frequency power supply ; a second radio frequency power supply configured to supply, a second radio frequency power having a frequency higher than a frequency of the first radio frequency power supplied; and a control device configured to control the first radio frequency power supply and the second radio frequency power supply such that the supply of one radio frequency power is stopped while the other radio frequency power is supplied, in which the frequency of the first radio frequency power and the frequency of the second radio frequency power are defined based on a full width at half maximum of a peak value of an ion energy distribution with respect to the frequency.

Methods and systems for RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. A radio frequency (RF) signal is pulsed within a processing chamber in accordance with a set of process parameters. Sensor data is received from one or more sensors that indicates a RF pulse waveform detected within the processing chamber. One or more RF signal characteristics are identified in the detected RF pulse waveform. Each identified RF signal characteristic corresponds to at least one RF signal pulse of the RF signal pulsing within the processing chamber. A determination is made, based on the identified one or more RF signal characteristics, whether the detected RF pulse waveform corresponds to the target RF pulse waveform. An indication of whether the detected RF pulse waveform corresponds to the target RF pulse waveform is provided to a client device.