An apparatus includes a chamber main body, a microwave output device that generates a microwave having a bandwidth, a wave guide tube that is connected between the microwave output device and the chamber main body, and tuner that is provided in the wave guide tube. The microwave output device generates a microwave of which power is pulse-modulated to have a high level and a low level. The tuner includes a stub configured to be adjusted a protrusion amount with respect to an internal space of the wave guide tube, a tuner wave detection unit that detects a measured value corresponding to power of a microwave in the wave guide tube at a timing based on the pulse frequency and the setting duty ratio, and a tuner control unit that adjusts a protrusion amount of the stub on the basis of the measured value detected by the tuner wave detection unit.

Disclosed is a facility for plasma-assisted chemical vapor deposition, on an inner wall of a polymer container, of a thin barrier layer, and a method for adjusting the facility. The facility includes: an enclosure mounted in a conductive recess; a device for injecting precursor gas into the enclosure; a microwave generator; and a device for diffusing microwaves in the enclosure, connected to the microwave generator, energizing and maintaining a plasma in the precursor gas. The solid-state microwave generator has variable microwave emission frequency. The facility includes a sensor measuring the energy intensity of the plasma produced in the container. The facility includes a control unit connected to the sensor and to the microwave generator, the control unit being programmed to adjust the microwave emission frequency, via the variable frequency drive, in accordance with the value of the physical quantity characterizing the energy intensity measured by the sensor.

A resonance frequency can be adjusted by shifting the resonance frequency without reducing an impedance function or a withstanding voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a power feed line from an electrical member other than a high frequency electrode within a processing vessel. Comb teeth M of a comb-teeth member 114 are inserted into winding gaps of air core coils 104(1) and 104(2). For example, first comb teeth M having a thickness m smaller than a standard thickness ts are mainly inserted in an effective zone A in a central portion of the air core coils. Further, in non-effective zones B at both sides or both end portions thereof, second comb teeth M+ having a thickness m+ equal to or larger than the standard thickness ts are arranged.

An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

A plasma processing apparatus includes: a processing container; a resonator configured to resonate electromagnetic waves to be supplied; a slot antenna connected to the resonator; and a transmission window configured to transmit the electromagnetic waves radiated from the slot antenna and supply the electromagnetic waves into the processing container, wherein the resonator includes: an input port including an inner shaft and an outer cylinder; an output port including an inner shaft and an outer cylinder; a power supply fin connecting the inner shaft of the input port and the inner shaft of the output port and provided in the resonator; and a ground fin connected to the outer cylinder of the input port and the outer cylinder of the output port at a same potential and provided to protrude within the resonator so as to be inserted between fins of the power supply fin.

Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.

A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20 C. to 145 C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m.sup.2 to 3.5 kW/m.sup.2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method incudes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

Embodiments disclosed herein include a method for field adjusting calibrating factors of a plurality of RF impedance matches for control of a plurality of plasma chambers. In an embodiment, the method comprises collecting and storing in a memory data from operation of the plurality of RF impedance matches, and finding a tune space for each of the plurality of RF impedance matches from the collected data. In an embodiment, the method further comprises finding adjustments to account for variability in each of the plurality of RF impedance matches, finding adjustments to variable tuning elements of the plurality of RF impedance matches to account for time varying and process related load impedances, and the method further comprises obtaining operating windows for the variable tuning elements in the plurality of RF impedance matches.

A plasma applicator includes a plasma discharge tube and a microwave cavity at least partially surrounding a portion of the plasma discharge tube. Microwave energy is coupled to the microwave cavity via a coupling iris. At least two orthogonal dimensions of the microwave cavity are selected such that the microwave energy in the microwave cavity propagates in a transverse electric (TE) mode. Primary electric fields generated from the microwave energy combine with an evanescent electric field generated from the coupling iris, such that a combined electric field in the microwave cavity is substantially uniform along the longitudinal axis of the plasma discharge tube. A plurality of radial microwave chokes is disposed over an exterior of the plasma discharge tube. Positions of the microwave chokes are such that microwave energy propagating in the TE mode and a transverse electric magnetic (TEM) mode is attenuated.