The invention relates to a device and a method for producing layers whose layer thickness distribution can be adjusted in coating systems with horizontally rotating substrate. A very homogeneous or a specific non-homogeneous distribution can be adjusted. The particle loading is also significantly reduced. The service life is significantly higher compared to other methods. Forming of parasitic coatings is reduced.

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may include a second lid plate coupled with the plurality of lid stacks. The plurality of lid stacks may be positioned between the first lid plate and the second lid plate. A component of each lid stack of the plurality of lid stacks may be coupled with the second lid plate.

A coating apparatus for coating a plurality of substrates includes a chamber body having a reaction chamber, a monomer discharge source having a discharge inlet for introducing a coating forming material into the reaction chamber of the chamber body, and a plasma generation source disposed at a central area of the reaction chamber of the chamber body for exciting the coating forming material, wherein the plurality of substrates is adapted for being arranged around the plasma generation source within the chamber body, so that the uniformity of the coatings formed on the surfaces of the substrates is enhanced, and the deposition velocity is increased.

A film forming apparatus includes a chamber that is a container in which a sputter gas is introduced, a carrying unit provided inside the chamber, and circulating and carrying a work-piece on a trajectory of a circular circumference, and a film formation processing unit including a sputter source depositing, on the work-piece circulated and carried by the carrying unit, a film formation material by sputtering to form a film, and a dividing member dividing a film forming position where the film is formed on the work-piece by the sputter source. The dividing member is installed so as to divide the film forming position in a way that, in the trajectory of the circular circumference, a trajectory of passing through a region other than the film forming position performing the film formation is longer than a trajectory of passing through the film forming position performing the film formation.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

An apparatus for depositing a metal film on a surface of a three-dimensional object, includes a mounting drum rotatably disposed inside a chamber and having a circumferential surface onto which a plurality of three-dimensional objects is settled and mounted making each surface thereof to be subjected to deposition be exposed to an outside; and at least one source target depositing a metal film onto the surface of the three-dimensional object mounted to the mounting drum by sputtering.

A semiconductor device manufacturing method, including: mounting substrates on a mounting table within a processing chamber along a rotation direction of the table; starting to supply a first-element-containing gas to a first region in the chamber along the rotation direction, while rotating the table and exhausting the processing chamber; starting to supply a second-element-containing gas to a second region in the chamber; starting to generate, by a plasma generating unit in the second region, plasma of the second-element-containing gas in the second region to have a first activity; and forming a thin film containing first and second elements on the substrates by rotating the table to cause the substrates to sequentially pass through the first and second regions in turn so that a first-element-containing layer is formed in the first region and is modified in the second region by generating plasma having a second activity higher than the first activity.