Processing methods and apparatus for increasing a reaction chamber batch size. Such a method of processing deposition substrates (e.g., wafers), involves conducting a deposition on a first portion of a batch of deposition wafers in a reaction chamber, conducting an interval conditioning reaction chamber purge to remove defects generated by the wafer processing from the reaction chamber; and following the interval conditioning mid-batch reaction chamber purge, conducting the deposition on another portion of the batch of wafers in the reaction chamber. The interval conditioning reaction chamber purge is conducted prior to exceeding a baseline for acceptable defect (e.g., particle) generation in the chamber and is performed while no wafers are positioned in the reaction chamber.

A device for holding a plurality of workpieces, which each include a circumferential wall structure surrounding an interior, includes a plurality of rotatable holding elements for holding the workpieces. The holding elements are configured to secure the workpieces. The workpieces can be stents and the method of coating can be deposition, particularly plasma enhanced chemical vapor deposition. The holding elements can include at least one connecting element which facilitates electrical charging of the holding elements and hence workpieces when connected to the holding elements by being connected to a charging unit.

There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.

A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

A plasma processing apparatus includes a plasma generator provided with a plasma electrode and performs plasma processing on a substrate accommodated in a processing container. At least a region corresponding to the plasma electrode of the plasma generator is formed of synthetic quartz.

An embodiment of a line-of-sight coating fixture includes a support structure, a spindle, and a shadow structure. The support structure includes a plurality of compartments disposed below a platter, each compartment having an opening on a periphery of the support structure. Each compartment is adapted to receive and secure a base of a workpiece such that a body of each workpiece to be coated is disposed about a periphery of the support structure and extends above the platter. The spindle is disposed through a center of the platter or support structure for rotating the workpieces thereabout. The shadow structure is disposed about the spindle, inside of the periphery, the shadow structure sized and adapted to shield a portion of each workpiece from line-of-sight coating material.

An object is to provide an atmospheric plasma processing method and an atmospheric plasma processing apparatus capable of suppressing a decrease in a processing speed caused by accompanying gas and performing highly efficient processing in a case where the processing is performed on a workpiece using atmospheric plasma by introducing plasma generation gas between a pair of electrodes and the workpiece from an inner side flow passage passing between the pair of electrodes while relatively moving the workpiece and the pair of electrodes. The object is achieved by defining p*, which is represented by Expression “p*=(h/2Uμ)×(−dP/dx)”, to satisfy 0<p*≤9 in a case where a distance between the pair of electrodes and the workpiece is denoted by h, a relative movement speed between the pair of electrodes and the workpiece is denoted by U, a viscosity of gas existing between the pair of electrodes and the workpiece is denoted by μ, a gas pressure between the pair of electrodes and the workpiece is denoted by P, and a position in a transport direction of the workpiece is denoted by x.

A method of producing hydrogen ions includes generating a diode-type HF plasma PL. This allows to set or adjust the energy of ions output by the plasma source in an improved manner.

Provided is a batch type substrate processing apparatus that supplies a process gas decomposed in a discharge space, which is distinguished from a processing space, into the processing space. The batch type substrate processing apparatus includes a reaction tube configured to provide a processing space, a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall and generating plasma in the discharge space by a plurality of electrodes extending along a longitudinal direction of the reaction tube. The plurality of electrodes includes a plurality of power supply electrodes spaced apart from each other and a plurality of ground electrodes provided between the plurality of power supply electrodes.

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.