Patent classifications
H01J37/32779
Plasma processing apparatus
A plasma processing apparatus includes a conveyance unit that has a rotator in a vacuum container, and circulating carries a workpiece by the rotator along a circular conveyance path, a cylindrical member extended in a direction toward the conveyance path in the vacuum container, a window member that divides a gas space where a process gas is introduced and an exterior, and an antenna causing the process gas to generate inductive coupling plasma for plasma processing when power is applied. The cylindrical member is provided with an opposing part with the opening and faces the rotator, a dividing wall is provided between the opposing part and the rotator so as not to contact the opposing part and the rotator and not to move relative to the vacuum container, and the dividing wall is provided with an adjustment opening that faces the opening, and adjusts a range of the plasma processing.
APPARATUS AND METHOD FOR CONTACTLESS TRANSPORTATION OF A DEVICE IN A VACUUM PROCESSING SYSTEM
An apparatus for contactless transportation of a device in a vacuum processing system is described. The apparatus includes: a magnetic transportation arrangement for providing a magnetic levitation force (F.sub.L) for levitating the device, the magnetic transportation arrangement comprising one or more active magnetic units; a sensor for monitoring a motion of the device, and a controller configured for controlling the one or more active magnetic units based on a signal provided by the sensor.
Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part is configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate. The buffer part includes a groove portion in which a part of the gas supply hole is cut out.
PLASMA TREATMENT APPARATUS
A plasma treatment apparatus includes a plurality of plasma treatment chambers S2 to S6 in which a plasma treatment is performed on a base material X, a tray Y configured to hold the base material X in a standing posture, and a lift mechanism 10 configured to continuously convey the tray Y to the plurality of plasma treatment chambers S2 to S6 in order to continuously perform a plasma treatment even when the base material is difficult to wind on a roll.
Device, method and use for the coating of lenses
A device, a method, and a use for coating lenses are proposed, wherein the lenses to be coated are arranged in pairs over parallel, tubular targets. The distance of the targets to each other and/or to the lenses is varied for individual adaption. Further, the lenses are coated from both sides.
Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment
An electrostatic chuck includes, a chuck function portion including a plurality of chuck regions on which an attractable object is placed respectively, and a concave surface portion provided in an outer region of the chuck regions, and electrodes arranged in an inner part of the chuck function portion corresponding to the chuck regions and an inner part of the chuck function portion corresponding to the concave surface portion, respectively.
Coating Apparatus and Coating Method
A coating apparatus includes a chamber body having a reaction chamber, a supporting rack, a monomer discharge source, and a plasma generation source. The monomer discharge source has a discharge inlet for introducing a coating forming material into the reaction chamber of the chamber body. The plasma generation source is disposed in the reaction chamber of the chamber body for exciting the coating forming material. The supporting rack is arranged for supporting a substrate, wherein the supporting rack is operable to move in the reaction chamber to guide the substrate to alternately move close to the monomer discharge source and the plasma generation source, so as to avoid the excessive decomposition of the coating forming material.
FILM FORMING METHOD AND SYSTEM
A film forming method includes forming a thin film by executing a plurality of cycles each including supplying a raw material gas to a substrate, supplying a reaction gas capable of reacting with the raw material gas to the substrate, and processing the substrate with deuterium plasma.
Coating Apparatus and Coating Method
A coating apparatus for coating a plurality of substrates includes a chamber body having a reaction chamber, a monomer discharge source having a discharge inlet for introducing a coating forming material into the reaction chamber of the chamber body, and a plasma generation source disposed at a central area of the reaction chamber of the chamber body for exciting the coating forming material, wherein the plurality of substrates is adapted for being arranged around the plasma generation source within the chamber body, so that the uniformity of the coatings formed on the surfaces of the substrates is enhanced, and the deposition velocity is increased.
Coating Apparatus and Coating Method
A coating apparatus includes a chamber body having a reaction chamber, a supporting rack, a monomer discharge source and a plasma generation source. The supporting rack has a supporting area for supporting the substrate. The monomer discharge source has a discharge inlet for introducing a coating forming material into the reaction chamber. The plasma generation source is arranged for exciting the coating forming material, wherein the supporting area of the supporting rack is located at a position between the monomer discharge source and the plasma generation source, so that the coating is evenly formed on the surface of the substrate, and the deposition velocity is increased.