An apparatus includes an assembly and hollow templates. The assembly includes multiple rods or shafts mounted thereon. The assembly is configured to rotate about a first axis, and each of the rods or shafts is additionally configured to rotate about a respective second axis. The hollow templates are fitted on the respective rods or shafts and are each configured to contain a balloon-based distal end of a medical instrument, each template having a patterned opening through which one or more electrodes are deposited on the distal end.

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

A film forming apparatus includes a chamber that is a container in which a sputter gas is introduced, a carrying unit provided inside the chamber, and circulating and carrying a work-piece on a trajectory of a circular circumference, and a film formation processing unit including a sputter source depositing, on the work-piece circulated and carried by the carrying unit, a film formation material by sputtering to form a film, and a dividing member dividing a film forming position where the film is formed on the work-piece by the sputter source. The dividing member is installed so as to divide the film forming position in a way that, in the trajectory of the circular circumference, a trajectory of passing through a region other than the film forming position performing the film formation is longer than a trajectory of passing through the film forming position performing the film formation.

A chemical vapor deposition system for semiconductor wafer production is disclosed. The system includes a process cluster coupled to a first end of a transfer chamber. The process cluster is maintained at a pressure that is lower than atmospheric pressure. The process cluster is also configured to apply epitaxial layers on one or more wafers loaded onto a wafer carrier. The system also includes an automatic factory interface coupled to a second end of the transfer chamber. The automatic factory interface is maintained at atmospheric pressure. The system includes one or more wafer carrier cleaning modules coupled to the automatic factory interface and configured to clean one or more of the wafer carriers without removing the wafer carriers from the chemical vapor deposition system.

Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes configured to generate plasma in the discharge space. At least one of the plurality of electrodes is disposed outside the partition wall, and at least one of the plurality of electrodes is disposed inside the partition wall.

A film formation time setting method to be implemented when forming silicon-containing films on a plurality of substrates arranged on a rotary table includes a film thickness measuring step of performing a provisional film forming process for a provisional film formation time TN, provisionally set up based on a cycle time T and a number of cycles N, measuring film thicknesses d.sub.N-1 of the silicon-containing films formed on the substrates at an end time of the (N-1).sup.th cycle, measuring film thicknesses d.sub.N-1N of the silicon-containing films at an intermediate time between the (N-1).sup.th cycle and the N.sup.th cycle, and measuring film thicknesses d.sub.N of the silicon-containing films at an end time of the N.sup.th cycle; and a film formation time specifying step of comparing the inter-plane uniformities of the silicon-containing films at the respective times to specify and set a film formation time for achieving an optimal inter-plane uniformity.

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

An apparatus includes an assembly and hollow templates. The assembly includes multiple hinges mounted thereon. The assembly is configured to rotate about a first axis, and each of the hinges is additionally configured to rotate about a respective second axis. The hollow templates are fitted on the respective hinges and are each configured to contain a balloon-based distal end of a medical instrument, each template having a patterned opening through which one or more electrodes are deposited on the distal end.

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.