The invention provides a collection assembly and a semiconductor pre-cleaning chamber, which relate to the semiconductor processing apparatus field. The collection assembly is configured to collect particle impurities in the semiconductor pre-cleaning chamber, and includes a protection plate and a collection plate arranged at an interval in the semiconductor pre-cleaning chamber. The protection plate is annular. A plurality of first through-holes are arranged at the protection plate and configured for the process gas in the semiconductor pre-cleaning chamber to pass through. The collection plate is located on a side of an air outlet end of the first through-holes and configured to capture at least a part of the particle impurities in the semiconductor pre-cleaning chamber passing through the first through-holes.

A system and method for optimizing maintenance of a remote plasma source comprises recording data from a remote plasma source. The data comprises measurements of one or more operating characteristics of the remote plasma source over a period of time and a plurality of indications of system fault event. The method may include receiving the data; analyzing the data; and determining, based on correlations between the measurements of the one or more operating characteristics and the plurality of system fault events, a threshold of an operating point. The operating point may comprise the measurements of the one or more operating characteristics at a particular time. The threshold signifies a pending system fault event is probable to a defined degree of confidence within a specified window of time. The system provides a notification to perform preventative maintenance on the remote plasma source.

A trap device including an exhaust gas introduction pipe configured to allow an exhaust gas to flow and be led out from an outlet; a fin member provided in a position where the fin member faces the outlet and is hit by the exhaust gas led out from the outlet; an exhaust path forming member covering at least a portion of the exhaust gas introduction pipe and including an exhaust path configured to exhaust the exhaust gas such that the exhaust gas is turned back, via the fin member, in an opposite direction to a direction of flow of the exhaust gas in the exhaust gas introduction pipe; and a cooling jacket configured to cool the fin member is provided. The fin member includes a fin extending in the opposite direction to the direction of the flow of the exhaust gas in the exhaust gas introduction pipe.

Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.

A plasma reaction system may include a plasma chamber and an ancillary reaction chamber. The plasma chamber may include a plasma chamber inlet for introducing reactant gases into the plasma chamber, plasma chamber walls that form an interior space in which chemical reactions between the reactant gases may occur, a plasma generated within the plasma chamber, a waveguide for directing energy towards the plasma generated within the plasma chamber, and a plasma chamber outlet for carrying first outlet gases from the plasma chamber. The ancillary reaction chamber may include an ancillary reaction chamber inlet configured to obtain the first outlet gases from the plasma chamber, ancillary reaction chamber walls that form an interior space of the ancillary reaction chamber in which second chemical reactions between the outlet gases may occur, and an ancillary reaction chamber outlet for carrying second outlet gases from the ancillary reaction chamber.

According to one embodiment, there is provided a gas regeneration method. The method includes setting a predetermined standard on a basis of a flow rate of rare gas set in a processing recipe. The method includes selecting a rare gas recovery step on a basis of the predetermined standard. The method includes, in the rare gas recovery step, guiding emission gas from a predetermined chamber to a rare gas regenerator. The method includes, in a step other than the rare gas recovery step, causing the emission gas to bypass the rare gas regenerator to discharge the emission gas.

Embodiments described herein relate to a heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.

A heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.

A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.