A plasma generating system includes a waveguide for transmitting a microwave energy therethrough and an inner wall disposed within the waveguide to define a plasma cavity, where a plasma is generated within the plasma cavity using the microwave energy. The plasma generating system further includes: an adaptor having a gas outlet through which an exhaust gas processed by the plasma exits the plasma cavity; and a recuperator directly attached to the adaptor and having a gas passageway that is in fluid communication with the gas outlet in the adaptor. The recuperator recovers heat energy from the exhaust gas and heats an input gas using the heat energy.

The present invention provides a plasma generating system that includes: a plasma cavity for generating a plasma therewithin by use of microwave energy; an adaptor electrically grounded and having a gas outlet through which an exhaust gas processed by the plasma exits the plasma cavity; and an ignition device mounted on the adaptor. The ignition device includes: a first electrode electrically grounded; and a second electrode electrically floating and configured to convert a portion of the microwave energy into an electrostatic discharge to thereby develop a voltage difference between the first and second electrodes, where the voltage difference generates a spark discharge between the first electrode and the second electrode to create the plasma.

Implementations of the present disclosure relate to methods and systems for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a method for abating effluent exiting a processing chamber is provided. The method begins by flowing an effluent from a processing chamber into a plasma source, wherein the effluent comprises one or more F-gases. The method further includes delivering at least one abating reagent to the plasma source, the abating reagent comprising at least one of water vapor and oxygen-containing gas, at operation. The method further includes activating the effluent and the abating reagent in the presence of a plasma to convert the one or more F-gases in the effluent and the abating reagent to an abated material.

A plasma generating system includes a waveguide for transmitting a microwave energy therethrough and an inner wall disposed within the waveguide to define a plasma cavity, where a plasma is generated within the plasma cavity using the microwave energy. The plasma generating system further includes: an adaptor mounted on a first side of the waveguide and physically separated from the waveguide by a first gap and having a gas outlet through which a gas processed by the plasma exits the plasma cavity; and an EM seal disposed in the first gap and configured to block leakage of the microwave energy through the first gap.

The present invention provides a plasma generating system that includes: a plasma cavity for generating a plasma therewithin by use of microwave energy; an adaptor electrically grounded and having a gas outlet through which an exhaust gas processed by the plasma exits the plasma cavity; and an ignition device mounted on the adaptor. The ignition device includes: a first electrode electrically grounded; and a second electrode electrically floating and configured to convert a portion of the microwave energy into an electrostatic discharge to thereby develop a voltage difference between the first and second electrodes, where the voltage difference generates a spark discharge between the first electrode and the second electrode to create the plasma.

A plasma generating system includes a waveguide for transmitting a microwave energy therethrough and an inner wall disposed within the waveguide to define a plasma cavity, where a plasma is generated within the plasma cavity using the microwave energy. The plasma generating system further includes: an adaptor mounted on a first side of the waveguide and physically separated from the waveguide by a first gap and having a gas outlet through which a gas processed by the plasma exits the plasma cavity; and an EM seal disposed in the first gap and configured to block leakage of the microwave energy through the first gap.

The present invention provides a plasma generating system that includes: a plurality of plasma reactors. Each plurality of plasma reactors includes: a waveguide for transmitting a microwave energy therethrough; a plasma chamber coupled to the waveguide and configured to generate a plasma therein using the microwave energy; a gas inlet for introducing a gas into the plasma chamber; an exhaust gas pipe for carrying an exhaust gas from the plasma chamber, wherein the plasma converts the gas into the exhaust gas; and a pressure control device installed in the exhaust gas pipe and configured to control a pressure of the exhaust gas in the exhaust gas pipe. The plasma generating system also includes a manifold coupled to the exhaust gas pipes of the plurality of plasma reactors and configured to receive the exhaust gas from the exhaust gas pipes.

A plasma generating system includes a waveguide for transmitting a microwave energy therethrough and an inner wall disposed within the waveguide to define a plasma cavity, where a plasma is generated within the plasma cavity using the microwave energy. The plasma generating system further includes: an adaptor having a gas outlet through which an exhaust gas processed by the plasma exits the plasma cavity; and a recuperator directly attached to the adaptor and having a gas passageway that is in fluid communication with the gas outlet in the adaptor. The recuperator recovers heat energy from the exhaust gas and heats an input gas using the heat energy.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

One or more embodiments described herein relate to abatement systems for reducing Br.sub.2 and Cl.sub.2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl.sub.2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and excites the gases within the process chamber. When HBr is energized, it forms Br.sub.2. Br.sub.2 and Cl.sub.2 are corrosive and toxic. However, the addition of H.sub.2O in the plasma reactor quenches the Br.sub.2 and Cl.sub.2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.