A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.

A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.

A system for transporting substrates and precisely align the substrates horizontally and vertically. The system decouples the functions of transporting the substrates, vertically aligning the substrates, and horizontally aligning the substrates. The transport system includes a carriage upon which plurality of chuck assemblies are loosely positioned, each of the chuck assemblies includes a base having vertical alignment wheels to place the substrate in precise vertical alignment. A pedestal is configured to freely slide on the base. The pedestal includes a set of horizontal alignment wheels that precisely align the pedestal in the horizontal direction. An electrostatic chuck is magnetically held to the pedestal.

An implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter held by the filter frame, wherein said filter is designed to be irradiated by an ion beam.

Solar cell emitter regions fabrication is described. In an example, a species mask, e.g., a shadow mask, is provided between a plasma source and a semiconductor wafer. The species mask includes an opening pattern having several openings with respective opening widths and pitches. Species emitted by the plasma source pass through the openings in the species mask and implant in the semiconductor wafer to form several emitter region fingers having respective finger widths and pitches. In an embodiment, the opening widths and pitches vary across the species mask and the emitter region finger widths and pitches are uniform across the semiconductor wafer.