A system, a method, and a non-transitory computer readable storage medium for controlling an ion implanter are disclosed herein. The system includes a sample module and a control module. The sample module is configured to generate a summarized value from process data of the ion implanter, and the process data correspond to a control parameter. The control module is configured to tune a control parameter, and the control module performs an ion implantation by releasing tools of the ion implanter in accordance with the control parameter when the summarized value meets a predetermined stability requirement.

Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.

The invention is to simplify operations performed when imaging an electron diffraction pattern by using a transmission electron microscope. As a solution to the problem, a transmission electron microscope includes a detector to which an electron diffraction pattern is projected, a mask for zero-order wave configured to be inserted into and pulled out from between a sample and the detector, and a current detector configured to be inserted into and pulled out from a detection region of the zero-order waves in a state where the mask is inserted. An amount of current of electron beams emitted to the mask is measured in real time, and the measurement result is automatically reflected in settings of imaging conditions of an imaging camera provided in the transmission electron microscope.

A method of assisting with authenticating a workpiece is provided. In another aspect, ions are generated, accelerated in an accelerator, an isotope is created, and then the isotope is implanted within a workpiece to assist with authenticating of the workpiece. A further aspect includes a workpiece substrate, a visual marker and an isotope internally located within the substrate adjacent the visual marker.

Apparatus and methods for the selective implanting of the outer portion of a workpiece are disclosed. A mask is disposed between the ion beam and the workpiece, having an aperture through which the ion beam passes. The aperture may have a concave first edge, forming using a radius equal to the inner radius of the outer portion of the workpiece. Further, the mask is affixed to a roplat such that the platen is free to rotate between a load/unload position and an operational position without moving the mask. In certain embodiments, the mask is affixed to the base of the roplat and has a first portion with an aperture that extends vertically upward from the base, and a second portion that is shaped so as not to interfere with the rotation of the platen. In other embodiments, the mask may be affixed to the arms of the roplat.

System and method to align a substrate under a shadow mask. A substrate holder has alignment mechanism, such as rollers, that is made to abut against an alignment straight edge. The substrate is then aligned with respect to the straight edge and is chucked to the substrate holder. The substrate holder is then transported into a vacuum processing chamber, wherein it is made to abut against a mask straight edge to which the shadow mask is attached and aligned to. Since the substrate was aligned to an alignment straight edge, and since the mask is aligned to the mask straight edge that is precisely aligned to the alignment straight edge, the substrate is perfectly aligned to the mask.

A method for processing a substrate includes receiving the substrate on a substrate holder disposed in a processing chamber, the substrate including a patterned hardmask disposed over an underlying layer, the patterned hardmask including features. The method further includes forming a first angle between a processing beam emitted from a processing nozzle and a normal direction of the substrate holder, the first angle selected such that the processing beam is shadowed from implanting into the underlying layer by adjacent features in the patterned hardmask, and emitting the processing beam at the first angle to modify a material of the patterned hardmask along a top surface of the patterned hardmask and along a sidewall of features in the patterned hardmask to form a modified hardmask. And the method further includes etching the underlying layer according to the modified hardmask.

According to one embodiment, an ion implantation device includes an ion beam irradiation unit that emits an ion beam; a target substrate holding unit that holds a target substrate disposed in a path of the ion beam; a first mask holding unit that holds a first mask disposed in front of the target substrate in the path; and a second mask holding unit that holds a second mask disposed between the first mask and the target substrate in the path. The first mask includes a first opening pattern through which the ion beam is able to pass. The second mask includes a second opening pattern through which the ion beam is able to pass.