A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, a gold layer, and an electroplated copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.

A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In forming the modified layer, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer from an inner side toward an outer side of the first wafer in a radial direction to thereby form the modified layers as to widen toward the lower side.

A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation 1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

A method of cleaning a silicon wafer in which the silicon wafer is roughened, including: forming an oxide film on the silicon wafer by SC1 cleaning, SC2 cleaning, or ozone water cleaning; cleaning the silicon wafer on which the oxide film is formed by using any one of: a diluted aqueous solution of ammonium hydroxide having an ammonium hydroxide concentration of 0.051% by mass or less; or a diluted aqueous solution containing ammonium hydroxide and hydrogen peroxide water and having an ammonium hydroxide concentration of 0.051% by mass or less and a hydrogen peroxide concentration of 0.2% by mass or less, the hydrogen peroxide concentration being four times or less the ammonium hydroxide concentration, to roughen front and rear faces of the silicon wafer.

The present invention provides a testing substrate (W) for estimating stress in production substrates due to a substrate support, said testing substrate having a support surface (SS) divided into predefined portions, wherein the predefined portions comprise at least one first portion (1) having a first coefficient of friction being substantially uniform across the at least one first portion, and at least one second portion (2) having a second coefficient of friction being substantially uniform across the at least one second portion, wherein the second coefficient of friction is different to the first coefficient of friction. The present invention also provides a method for estimating stress in a substrate due to a substrate support and a system for making such an estimation.

Semiconductor substrate thinning systems and methods. Implementations of a method of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface and inducing damage into a portion of the semiconductor substrate adjacent to the second surface forming a damage layer. The method may also include backgrinding the second surface of the semiconductor substrate.

A carrier or manufacturing unit includes a combination of a flexible semiconductor device package, adhesive disposed on the flexible semiconductor device package and a rigid substrate disposed on the adhesive. The flexible semiconductor device package may be protected during transport and/or assembly by the rigid substrate. In a method of manufacturing an electronic product such as wearable technology that requires a flexible semiconductor device package, the unit can be transported to a work station and physically and/or electrically connected to another/other component(s) of the technology. Then the rigid substrate is removed.