Provided is a back grinding adhesive sheet which can adequately protect protrusions provided to a semiconductor wafer, and with which back grinding can be adequately performed. The present invention provides a back grinding adhesive sheet for a semiconductor wafer having protrusions, the back grinding adhesive sheet comprising a non-adhesive cushion layer, and an adhesive layer provided on the cushion layer. The adhesive layer has an opening with a smaller diameter than the diameter of the semiconductor wafer, and the outer edge of the semiconductor wafer is adhered to the adhesive layer such that the protrusions on the semiconductor wafer are positioned inside the opening. The protrusions are protected by the cushion layer when the semiconductor wafer is in the state of being adhered to the adhesive layer. The adhesive sheet satisfies at least one of the following conditions (1)-(2). (1) When the cushion layer is cut out using the dumbbell from JISZ1702 and is stretched 25% at a gauge length of 40 mm and a tensile speed of 300 mm/min, the tensile stress is 2-30N/10 mm. (2) The cushion layer is formed from a thermoplastic resin that has a melt flow rate (JISK7210, 125 C./10.0 kg load) of 0.2-30 g/10 min, and a melting point of 60-110 C.

A method of manufacturing a semiconductor device includes bonding a first wafer with a second wafer. The second wafer includes a substrate, an isolation structure in the substrate, a transistor on the substrate, and a interconnect structure over the second transistor. A first etching process is performed to form a first via opening and a second via opening in the substrate. The second via opening extends to the isolation structure, and the second via opening is deeper than the first via opening. A second etching process is performed such that the first via opening exposes the substrate. A third etching process is performed such that the first via opening and the second via opening exposes the interconnect structure, and the second via opening penetrates the isolation structure. A first via is formed in the first via opening and a second via is formed in the second via opening.

Devices, systems, and methods for electron transparent substrates can include electron transparent windows comprising thin film. Trenches can be defined for sectioning areas, and further sub-areas. Different trench characteristics can permit desirable cleaving by areas, and further by sub-areas to support ease of use.

A wafer processing method includes sticking a protective tape to a front surface of a wafer, applying a laser beam to the wafer from a back surface of the wafer to thereby form trial modified layers, dividing the wafer to form a sample piece, bending the sample piece to the protective tape side to expose a section, imaging the section, and measuring the positions of the trial modified layers, thereby generating measurement data. Thereafter, appropriate positions inside the wafer at which to position a focal point of the laser beam are set based on the measurement data. The laser beam is applied to the wafer with the focal point of the laser beam positioned at the positions thus set, to thereby form modified layers, and an external force is exerted on streets to divide the wafer into individual device chips.

A processing method of a wafer includes irradiating the wafer with a laser beam in an annular pattern a predetermined distance from an outer peripheral edge of the wafer, thereby forming an annular modified layer and cracks spreading from the modified layer, before forming the modified layer, storing anticipated regions indicating regions which are part of an annular region that extends along the outer peripheral edge and is to be irradiated with the laser beam and in each of which a failure of formation of the cracks spreading from the modified layer is anticipated, and after the modified layer is formed, grinding the wafer on a side of a back surface thereof to thin the wafer to a finish thickness. In forming the modified layer, the anticipated regions are irradiated with the laser beam under irradiation conditions different from those for the annular region excluding the anticipated regions.

There is provided a method of fabricating a semiconductor device, method including: a) forming semiconductor elements in plural element regions surrounded by assumed dicing lines on a first principal surface of a semiconductor wafer; b) grinding the second principal surface in such a way that an outer peripheral portion of a second principal surface on the opposite side of the first principal surface of the semiconductor wafer becomes thicker than an inner peripheral portion of the second principal surface; c) forming a metal film, in such a way as to avoid sections corresponding to the dicing lines, on the second principal surface that has been ground in the grinding step; and d) cutting the semiconductor wafer from the second principal surface side along portions where the metal film is not formed on the dicing lines.

A method of microfabrication is provided. A substrate having a working surface and having a backside surface opposite to the working surface is received. The substrate has an initial wafer bow resulting from one or more micro fabrication processing steps executed on the working surface of the substrate. The initial wafer bow of the substrate is measured and the initial wafer bow is used to generate an initial wafer bow value that identifies a degree of first order wafer bowing of the substrate. A correction film recipe based on the initial wafer bow value is identified. The correction film recipe specifies parameters of a correction film to be deposited on the backside surface of the substrate to change wafer bow of the substrate from the initial wafer bow to a modified wafer bow. The correction film on the backside surface of the substrate according to the correction film recipe is deposited. The correction film physically modifies internal stresses on the substrate and causes the substrate to have a modified bow with the predetermined wafer bow value.

A method for manufacturing an epitaxial wafer may comprise polishing a back surface and a front surface of a wafer using a double-side polishing process, forming a protective film on the back surface of the polished wafer, forming an epi layer on the front surface of the wafer on which the protective film is formed to form an epitaxial wafer, and cleaning the epitaxial wafer.

The present disclosure provides a die. The die of the present disclosure has a top surface, a plurality of side surfaces, a bottom surface, a circuit layer and a platform. The bottom surface is connected to the side surfaces. The circuit layer is formed on the bottom surface. The platform is disposed around the top surface and is parallel to the top surface and the bottom surface. The distance from the platform to the bottom surface is less than that from the top surface to the bottom surface. The platform is perpendicularly connected to the side surfaces. The present disclosure further provides a method of manufacturing the above die and a semiconductor package with the die.

A method of manufacturing a polycrystalline silicon carbide wafer includes the following stages: heat treatment of a polycrystalline silicon carbide slab; thinning of the polycrystalline silicon carbide slab, the thinning comprising a correction, by withdrawal of material from the polycrystalline silicon carbide slab, of a deformation brought about by the heat treatment.