A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, an aurum layer, and an electroplating copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.

A semiconductor wafer and a semiconductor wafer fabrication method are provided. The wafer includes a supporting substrate, a semiconductor substrate and a contact layer. The supporting substrate has a first surface and a second surface opposite to the first surface. The semiconductor substrate is disposed on the first surface of the supporting substrate, in which the semiconductor substrate is configured to form plural devices. The contact layer is disposed on the second surface of the supporting substrate to contact the supporting substrate, in which the contact layer is configured to contact an electrostatic chuck and has a resistivity of the contact layer smaller than a resistivity of the supporting substrate. In semiconductor wafer fabrication method, at first, a raw wafer is provided. Then, the contact layer is formed by using an implantation operation or a deposition operation.

A method of processing a wafer includes a grinding step of grinding a reverse side of a wafer that has first insulating films covering via electrodes, an electrode protruding step of protruding the via electrodes covered with the first insulating films from the reverse side by supplying a first etching gas turned to a plasma, an insulating film forming step of covering the reverse side with a second insulating film, a via electrode exposing step of supplying a second etching gas turned to a plasma to expose the via electrodes after having formed a resist film having openings overlapping the via electrodes, and an electrode forming step of forming electrodes connected to the via electrodes.

A wafer thinning method and a wafer structure are provided. In the wafer thinning method, a to-be-thinned wafer is provided, and the to-be-thinned wafer is grinded on a rear surface of the to-be-thinned wafer. Then, a first planarization process is performed on a rear surface of the grinded wafer to restore surface flatness of the grinded wafer, and a second planarization process is performed on a rear surface of the wafer obtained after the first planarization process is performed until a target thinned thickness is reached.

Methods for reducing warpage of bowed semiconductor substrates, particularly saddle-shaped bowed semiconductor substrates, are provided herein. Methods involve depositing a bow compensation layer by physical vapor deposition on the backside of the bowed semiconductor substrate in regions to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve sputtering material onto a backside of a substrate using a shadow mask or by using more than one target and rotating the semiconductor substrate being sputtering operations.

A method includes placing a coupling mechanism material layer on a backside of a wafer having power devices fabricated on a frontside thereof, and placing conductive spacer blocks on the coupling mechanism material layer on a backside of the selected wafer. The method further includes activating the coupling mechanism material to bond the conductive spacer blocks to the backside of the selected wafer, and singulating the wafer to separate the vertical device stacks, each of the singulated vertical device stacks including a device die bonded to, or fused with, a conductive spacer block.

A substrate has a front side including an electrical circuit and a rear side including an exposed zone that faces the electrical circuit. In an electrochemical treatment step, an electrical potential is laterally applied at least to the exposed zone of the rear side of the substrate, while the exposed zone is in contact with a chemically reactive substance. The electrical potential causes a lateral flow of electrical current at least in the exposed zone of the substrate. The lateral flow of current and the chemically reactive substance alter the substrate in at least the exposed zone.

The present invention relates to a back grinding tape including a polymer substrate and an adhesive layer, wherein the adhesive layer includes a (meth)acrylate resin containing 30 to 60% by weight of a repeating unit derived from a monomer or an oligomer having a glass transition temperature of 0 C. or higher, and wherein the adhesive layer has a glass transition temperature of 20 C. to 10 C., and a method of grinding wafers using the back grinding tape.

Provided a method of producing a carrier which make it possible to prevent the reduction in the flatness of a semiconductor wafer even if the semiconductor wafer is subjected to repeated double-side polishing procedures. The method of producing a carrier including a metal portion and a ring-shaped resin portion includes: a preparation step of preparing the metal portion and the resin portion (Step S1); a placement step of placing the resin portion in the retainer opening in the metal portion (Step S2); and a resin portion polishing step of polishing both surface of the resin portion (Step S4). The method includes, prior to the resin portion polishing step (Step S4), a production stage swelling step of swelling the resin portion placed in the retainer opening in the metal portion by impregnating the resin portion with a first liquid (Step S3).